249,617 research outputs found

    20 K superconductivity in heavily electron doped surface layer of FeSe bulk crystal

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    A superconducting transition temperature Tc as high as 100 K was recently discovered in 1 monolayer (1ML) FeSe grown on SrTiO3 (STO). The discovery immediately ignited efforts to identify the mechanism for the dramatically enhanced Tc from its bulk value of 7 K. Currently, there are two main views on the origin of the enhanced Tc; in the first view, the enhancement comes from an interfacial effect while in the other it is from excess electrons with strong correlation strength. The issue is controversial and there are evidences that support each view. Finding the origin of the Tc enhancement could be the key to achieving even higher Tc and to identifying the microscopic mechanism for the superconductivity in iron-based materials. Here, we report the observation of 20 K superconductivity in the electron doped surface layer of FeSe. The electronic state of the surface layer possesses all the key spectroscopic aspects of the 1ML FeSe on STO. Without any interface effect, the surface layer state is found to have a moderate Tc of 20 K with a smaller gap opening of 4 meV. Our results clearly show that excess electrons with strong correlation strength alone cannot induce the maximum Tc, which in turn strongly suggests need for an interfacial effect to reach the enhanced Tc found in 1ML FeSe/STO.Comment: 5 pages, 4 figure

    Z_{12-I} Orbifold Compactification toward SUSY Standard Model

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    We explain the orbifold compactification in string models and present a Z_{12-I} orbifold compactification toward supersymmetric standard models. We also point out an effective R-parity from this string construction. The VEVs of gauge singlets are chosen such that phenomenological constraints are satisfied.Comment: 13 pages with 5 figure. Talk presented at "CTP Symposium on SUSY at LHC", Cairo, 11-14 March 200

    Compositional changes on GaN surfaces under low-energy ion bombardment studied by synchrotron-based spectroscopies

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    We have investigated compositional changes on GaNsurfaces under Ar-ion bombardment using synchrotron-based high-resolution x-rayphotoemission (PES) and near-edge x-ray absorption fine structure(NEXAFS)spectroscopy. The low-energy ion bombardment of GaN produces a Ga-rich surface layer which transforms into a metallic Ga layer at higher bombarding energies. At the same time, the photoemissionspectra around Nā€Š1s core levels reveal the presence of both uncoordinated nitrogen and nitrogen interstitials, which we have analyzed in more details by x-rayabsorption measurements at Nā€ŠK edge. We have demonstrated that PES and NEXAFS provide a powerful combination for studying the compositional changes on GaNsurfaces. A mechanism for the relocation and loss of nitrogen during ion bombardment in agreement with some recent experimental and theoretical studies of defect formation in GaN has been proposed.P.N.K.D. is grateful for the financial support of the Australian Research Council
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