Anomalous Hall Effect in three ferromagnets: EuFe4Sb12, Yb14MnSb11, and Eu8Ga16Ge30

The Hall resistivity (Rho_xy), resistivity (Rho_xx), and magnetization of three metallic ferromagnets are investigated as a function of magnetic field and temperature. The three ferromagnets, EuFe4Sb12 (Tc = 84 K), Yb14MnSb11 (Tc = 53 K), and Eu8Ga16Ge30 (Tc = 36 K) are Zintl compounds with carrier concentrations between 1 x 10^21 cm^-3 and 3.5 x 10^21 cm^-3. The relative decrease in Rho_xx below Tc [Rho_xx(Tc)/Rho_xx(2 K)] is 28, 6.5, and 1.3 for EuFe4Sb12, Yb14MnSb11, and Eu8Ga16Ge30 respectively. The low carrier concentrations coupled with low magnetic anisotropies allow a relatively clean separation between the anomalous (Rho_'xy), and normal contributions to the measured Hall resistivity. For each compound the anomalous contribution in the zero field limit is fit to alpha Rho_xx + sigma_xy rho_xx^2 for temperatures T < Tc. The anomalous Hall conductivity, sigma_xy, is -220 +- 5 (Ohm^-1 cm^-1), -14.7 +- 1 (Ohm^-1 cm^-1), and 28 +- 3 (Ohm^-1 cm^-1) for EuFe4Sb12, Yb14MnSb11, and Eu8Ga16Ge30 respectively and is independent of temperature for T < Tc if the change in spontaneous magnetization (order parameter) with temperature is taken into account. These data are consistent with recent theories of the anomalous Hall effect that suggest that even for stochiometric ferromagnetic crystals, such as those studied in this article, the intrinsic Hall conductivity is finite at T = 0, and is a ground state property that can be calculated from the electronic structure.Comment: 22 pages, 13 figures Submitted to PR

Exact time correlation functions for N classical Heisenberg spins in the `squashed' equivalent neighbor model

We present exact integral representations of the time-dependent spin-spin correlation functions for the classical Heisenberg N-spin `squashed' equivalent neighbor model, in which one spin is coupled via the Heisenberg exchange interaction with strength $J_1$ to the other N-1 spins, each of which is coupled via the Heisenberg exchange coupling with strength $J_2$ to the remaining N-2 spins. At low temperature T we find that the N spins oscillate in four modes, one of which is a central peak for a semi-infinite range of the values of the exchange coupling ratio. For the N=4 case of four spins on a squashed tetrahedron, detailed numerical evaluations of these results are presented. As $T\to\infty$, we calculate exactly the long-time asymptotic behavior of the correlation functions for arbitrary N, and compare our results with those obtained for three spins on an isosceles triangle.Comment: 9 pages, 8 figures, submitted to Phys. Rev.

Incommensurate Charge Order Phase in Fe2OBO3 due to Geometrical Frustration

The temperature dependence of charge order in Fe2OBO3 was investigated by resistivity and differential scanning calorimetry measurements, Mossbauer spectroscopy, and synchrotron x-ray scattering, revealing an intermediate phase between room temperature and 340 K, characterized by coexisting mobile and immobile carriers, and by incommensurate superstructure modulations with temperature-dependent propagation vector (1/2,0,tau). The incommensurate modulations arise from specific anti-phase boundaries with low energy cost due to geometrical charge frustration.Comment: 4 p., 5 fig.; v2: slightly expanded introduction + minor changes. PRL in prin

Charge Order Superstructure with Integer Iron Valence in Fe2OBO3

Solution-grown single crystals of Fe2OBO3 were characterized by specific heat, Mossbauer spectroscopy, and x-ray diffraction. A peak in the specific heat at 340 K indicates the onset of charge order. Evidence for a doubling of the unit cell at low temperature is presented. Combining structural refinement of diffraction data and Mossbauer spectra, domains with diagonal charge order are established. Bond-valence-sum analysis indicates integer valence states of the Fe ions in the charge ordered phase, suggesting Fe2OBO3 is the clearest example of ionic charge order so far.Comment: 4 pages, 5 figures. Fig. 3 is available in higher resolution from the authors. PRL in prin

Temperature-dependent Raman spectroscopy in BaRuO3_3 systems

We investigated the temperature-dependence of the Raman spectra of a nine-layer BaRuO$_3$ single crystal and a four-layer BaRuO$_3$ epitaxial film, which show pseudogap formations in their metallic states. From the polarized and depolarized spectra, the observed phonon modes are assigned properly according to the predictions of group theory analysis. In both compounds, with decreasing temperature, while $A_{1g}$ modes show a strong hardening, $E_g$ (or $E_{2g}$) modes experience a softening or no significant shift. Their different temperature-dependent behaviors could be related to a direct Ru metal-bonding through the face-sharing of RuO$_6$. It is also observed that another $E_{2g}$ mode of the oxygen participating in the face-sharing becomes split at low temperatures in the four layer BaRuO$_3$. And, the temperature-dependence of the Raman continua between 250 $\sim$ 600 cm$^{-1}$ is strongly correlated to the square of the plasma frequency. Our observations imply that there should be a structural instability in the face-shared structure, which could be closely related to the pseudogap formation of BaRuO$_3$ systems.Comment: 8 pages, 6 figures. to be published in Phys. Rev.

Saturation of electrical resistivity

Resistivity saturation is observed in many metallic systems with a large resistivity, i.e., when the resistivity has reached a critical value, its further increase with temperature is substantially reduced. This typically happens when the apparent mean free path is comparable to the interatomic separations - the Ioffe-Regel condition. Recently, several exceptions to this rule have been found. Here, we review experimental results and early theories of resistivity saturation. We then describe more recent theoretical work, addressing cases both where the Ioffe-Regel condition is satisfied and where it is violated. In particular we show how the (semiclassical) Ioffe-Regel condition can be derived quantum-mechanically under certain assumptions about the system and why these assumptions are violated for high-Tc cuprates and alkali-doped fullerides.Comment: 16 pages, RevTeX, 15 eps figures, additional material available at http://www.mpi-stuttgart.mpg.de/andersen/saturation

Surgical site infection after gastrointestinal surgery in high-income, middle-income, and low-income countries: a prospective, international, multicentre cohort study

Background: Surgical site infection (SSI) is one of the most common infections associated with health care, but its importance as a global health priority is not fully understood. We quantified the burden of SSI after gastrointestinal surgery in countries in all parts of the world. Methods: This international, prospective, multicentre cohort study included consecutive patients undergoing elective or emergency gastrointestinal resection within 2-week time periods at any health-care facility in any country. Countries with participating centres were stratified into high-income, middle-income, and low-income groups according to the UN's Human Development Index (HDI). Data variables from the GlobalSurg 1 study and other studies that have been found to affect the likelihood of SSI were entered into risk adjustment models. The primary outcome measure was the 30-day SSI incidence (defined by US Centers for Disease Control and Prevention criteria for superficial and deep incisional SSI). Relationships with explanatory variables were examined using Bayesian multilevel logistic regression models. This trial is registered with ClinicalTrials.gov, number NCT02662231. Findings: Between Jan 4, 2016, and July 31, 2016, 13 265 records were submitted for analysis. 12 539 patients from 343 hospitals in 66 countries were included. 7339 (58·5%) patient were from high-HDI countries (193 hospitals in 30 countries), 3918 (31·2%) patients were from middle-HDI countries (82 hospitals in 18 countries), and 1282 (10·2%) patients were from low-HDI countries (68 hospitals in 18 countries). In total, 1538 (12·3%) patients had SSI within 30 days of surgery. The incidence of SSI varied between countries with high (691 [9·4%] of 7339 patients), middle (549 [14·0%] of 3918 patients), and low (298 [23·2%] of 1282) HDI (p < 0·001). The highest SSI incidence in each HDI group was after dirty surgery (102 [17·8%] of 574 patients in high-HDI countries; 74 [31·4%] of 236 patients in middle-HDI countries; 72 [39·8%] of 181 patients in low-HDI countries). Following risk factor adjustment, patients in low-HDI countries were at greatest risk of SSI (adjusted odds ratio 1·60, 95% credible interval 1·05–2·37; p=0·030). 132 (21·6%) of 610 patients with an SSI and a microbiology culture result had an infection that was resistant to the prophylactic antibiotic used. Resistant infections were detected in 49 (16·6%) of 295 patients in high-HDI countries, in 37 (19·8%) of 187 patients in middle-HDI countries, and in 46 (35·9%) of 128 patients in low-HDI countries (p < 0·001). Interpretation: Countries with a low HDI carry a disproportionately greater burden of SSI than countries with a middle or high HDI and might have higher rates of antibiotic resistance. In view of WHO recommendations on SSI prevention that highlight the absence of high-quality interventional research, urgent, pragmatic, randomised trials based in LMICs are needed to assess measures aiming to reduce this preventable complication

Catalyzed Water Oxidation by Solar Irradiation of Band-Gap-Narrowed Semiconductors (Part 1. Overview).

The objectives of this report are: (1) Investigate the catalysis of water oxidation by cobalt and manganese hydrous oxides immobilized on titania or silica nanoparticles, and dinuclear metal complexes with quinonoid ligands in order to develop a better understanding of the critical water oxidation chemistry, and rationally search for improved catalysts. (2) Optimize the light-harvesting and charge-separation abilities of stable semiconductors including both a focused effort to improve the best existing materials by investigating their structural and electronic properties using a full suite of characterization tools, and a parallel effort to discover and characterize new materials. (3) Combine these elements to examine the function of oxidation catalysts on Band-Gap-Narrowed Semiconductor (BGNSC) surfaces and elucidate the core scientific challenges to the efficient coupling of the materials functions

Catalyzed Water Oxidation by Solar Irradiation of Band-Gap-Narrowed Semiconductors (Part 2. Overview).

The objectives of this report are: (1) Investigate the catalysis of water oxidation by cobalt and manganese hydrous oxides immobilized on titania or silica nanoparticles, and dinuclear metal complexes with quinonoid ligands in order to develop a better understanding of the critical water oxidation chemistry, and rationally search for improved catalysts. (2) Optimize the light-harvesting and charge-separation abilities of stable semiconductors including both a focused effort to improve the best existing materials by investigating their structural and electronic properties using a full suite of characterization tools, and a parallel effort to discover and characterize new materials. (3) Combine these elements to examine the function of oxidation catalysts on Band-Gap-Narrowed Semiconductor (BGNSC) surfaces and elucidate the core scientific challenges to the efficient coupling of the materials functions