Radiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite

Thick, fully depleted p-channel charge-coupled devices (CCDs) have been developed at the Lawrence Berkeley National Laboratory (LBNL). These CCDs have several advantages over conventional thin, n-channel CCDs, including enhanced quantum efficiency and reduced fringing at near-infrared wavelengths and improved radiation tolerance. Here we report results from the irradiation of CCDs with 12.5 and 55 MeV protons at the LBNL 88-Inch Cyclotron and with 0.1-1 MeV electrons at the LBNL Co60 source. These studies indicate that the LBNL CCDs perform well after irradiation, even in the parameters in which significant degradation is observed in other CCDs: charge transfer efficiency, dark current, and isolated hot pixels. Modeling the radiation exposure over a six-year mission lifetime with no annealing, we expect an increase in dark current of 20 e/pixel/hr, and a degradation of charge transfer efficiency in the parallel direction of 3e-6 and 1e-6 in the serial direction. The dark current is observed to improve with an annealing cycle, while the parallel CTE is relatively unaffected and the serial CTE is somewhat degraded. As expected, the radiation tolerance of the p-channel LBNL CCDs is significantly improved over the conventional n-channel CCDs that are currently employed in space-based telescopes such as the Hubble Space Telescope.Comment: 11 pages, 10 figures, submitted to IEEE Transaction

Multi-amplifier Sensing Charge-coupled Devices for Next Generation Spectroscopy

We present characterization results and performance of a prototype Multiple-Amplifier Sensing (MAS) silicon charge-coupled device (CCD) sensor with 16 channels potentially suitable for faint object astronomical spectroscopy and low-signal, photon-limited imaging. The MAS CCD is designed to reach sub-electron readout noise by repeatedly measuring charge through a line of amplifiers during the serial transfer shifts. Using synchronized readout electronics based on the Dark Energy Spectroscopic Instrument CCD controller, we report a read noise of 1.03 e− rms pix−1 at a speed of 26 μs pix−1 with a single-sample readout scheme where charge in a pixel is measured only once for each output stage. At these operating parameters, we find the amplifier-to-amplifier charge transfer efficiency (ACTE) to be >0.9995 at low counts for all amplifiers but one for which the ACTE is 0.997. This charge transfer efficiency falls above 50,000 electrons for the read-noise optimized voltage configuration we chose for the serial clocks and gates. The amplifier linearity across a broad dynamic range from ∼300 to 35,000 e− was also measured to be ±2.5%. We describe key operating parameters to optimize on these characteristics and describe the specific applications for which the MAS CCD may be a suitable detector candidate

Improved Spatial Resolution in Thick, Fully-Depleted CCDs withEnhanced Red Sensitivity

The point spread function (PSF) is an important measure of spatial resolution in CCDs for point-like objects, since it affects image quality and spectroscopic resolution. We present new data and theoretical developments for lateral charge diffusion in thick, fully-depleted charge-coupled devices (CCDs) developed at Lawrence Berkeley National Laboratory (LBNL). Because they can be over-depleted, the LBNL devices have no field-free region and diffusion is controlled through the application of an external bias voltage. We give results for a 3512 x 3512 format, 10.5 {micro}m pixel back-illuminated p-channel CCD developed for the SuperNova/Acceleration Probe (SNAP), a proposed satellite-based experiment designed to study dark energy. The PSF was measured at substrate bias voltages between 3 V and 115 V. At a bias voltage of 115 V, we measure an rms diffusion of 3.7 {+-} 0.2 {micro}m. Lateral charge diffusion in LBNL CCDs will meet the SNAP requirements

Readout optimization of multi-amplifier sensing charge-coupled devices for single-quantum measurement

The non-destructive readout capability of the Skipper Charge Coupled Device (CCD) has been demonstrated to reduce the noise limitation of conventional silicon devices to levels that allow single-photon or single-electron counting. The noise reduction is achieved by taking multiple measurements of the charge in each pixel. These multiple measurements come at the cost of extra readout time, which has been a limitation for the broader adoption of this technology in particle physics, quantum imaging, and astronomy applications. This work presents recent results of a novel sensor architecture that uses multiple non-destructive floating-gate amplifiers in series to achieve sub-electron readout noise in a thick, fully-depleted silicon detector to overcome the readout time overhead of the Skipper-CCD. This sensor is called the Multiple-Amplifier Sensing Charge-Coupled Device (MAS-CCD) can perform multiple independent charge measurements with each amplifier, and the measurements from multiple amplifiers can be combined to further reduce the readout noise. We will show results obtained for sensors with 8 and 16 amplifiers per readout stage in new readout operations modes to optimize its readout speed. The noise reduction capability of the new techniques will be demonstrated in terms of its ability to reduce the noise by combining the information from the different amplifiers, and to resolve signals in the order of a single photon per pixel. The first readout operation explored here avoids the extra readout time needed in the MAS-CCD to read a line of the sensor asociated with the extra extent of the serial register. The second technique explore the capability of the MAS-CCD device to perform a region of interest readout increasing the number of multiple samples per amplifier in a targeted region of the active area of the device

Quantum efficiency characterization of back-illuminated CCDs Part 2: reflectivity measurements

The usual quantum efficiency (QE) measurement heavily relies on a calibrated photodiode (PD) and the knowledgeof the CCD s gain. Either can introduce significant systematic errors. But reflectivity can also be used to verify QE measurements. 1 - R >_ QE, where R is the reflectivity, and over a significant wavelength range, 1 - R = QE. An unconventional reflectometer has been developed to make this measurement. R is measured in two steps, using light from the lateral monochromator port via an optical fiber. The beam intensity is measured directly with a PD, then both the PD and CCD are moved so that the optical path length is unchanged and the light reflects once from the CCD; the PD current ratio gives R. Unlike traditional schemes this approach makes only one reflection from the CCD surface. Since the reflectivity of the LBNL CCDs might be as low as 2 percent this increases the signal to noise ratio dramatically. The goal is a 1 percent accuracy. We obtain good agreement between 1 - R and the direct QE results

Measurement of lateral charge diffusion in thick, fully depleted, back-illuminated CCDs

Lateral charge diffusion in back-illuminated CCDs directly affects the point spread function (PSF) and spatial resolution of an imaging device. This can be of particular concern in thick, back-illuminated CCDs. We describe a technique of measuring this diffusion and present PSF measurements for an 800x1100, 15 mu m pixel, 280 mu m thick, back-illuminated, p-channel CCD that can be over-depleted. The PSF is measured over a wavelength range of 450 nm to 650 nm and at substrate bias voltages between 6 V and 80 V

Integrating Signal Processing and A/D Conversion in one Focal-Plane Mounted ASIC

The CRIC (CCD Readout IC) ASIC has been designed to meet the power, space and radiation requirements of the SNAP satellite. It incorporates four channels consisting of a pre-amplifier, double correlated sampler and pipeline A/D converter with integrated voltage reference. The CRIC chip has been specifically designed to operate both at room temperature and at typical focal plane temperatures down to 130K. This minimizes wiring complexity while maintaining signal integrity on complex focal planes. CRIC is half of a two ASIC CCD readout system; the other ASIC in development is a bias and clock voltage generator. Also in development, are 16 and 32 channel versions of CRIC for use with hybrid photodiode and near infrared pixel arrays

Integrating Signal Processing and A/D Conversion in one Focal-Plane Mounted ASIC

The CRIC (CCD Readout IC) ASIC has been designed to meet the power, space and radiation requirements of the SNAP satellite. It incorporates four channels consisting of a pre-amplifier, double correlated sampler and pipeline A/D converter with integrated voltage reference. The CRIC chip has been specifically designed to operate both at room temperature and at typical focal plane temperatures down to 130K. This minimizes wiring complexity while maintaining signal integrity on complex focal planes. CRIC is half of a two ASIC CCD readout system; the other ASIC in development is a bias and clock voltage generator. Also in development, are 16 and 32 channel versions of CRIC for use with hybrid photodiode and near infrared pixel arrays