スピン電界効果トランジスタの作製とスピン依存伝導特性 : 縦型スピン電界効果トランジスタと面内伝導型スピンバルブ電界効果トランジスタ

学位の種別: 課程博士審査委員会委員 : （主査）東京大学教授 田中 雅明, 東京大学教授 高木 信一, 東京大学教授 平川 一彦, 東京大学教授 田畑 仁, 東京大学准教授 大矢 忍, 東京大学准教授 ファムナムハイUniversity of Tokyo(東京大学

Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet

A major issue in the development of spintronic memory devices is the reduction of the power consumption for the magnetization reversal. For this purpose, the artificial control of the magnetic anisotropy of ferromagnetic materials is of great importance. Here, we demonstrate the control of the carrier-energy dependence of the magnetic anisotropy of the density of states (DOS) using the quantum size effect in a single-crystal ferromagnetic material, GaMnAs. We show that the mainly twofold symmetry of the magnetic anisotropy of DOS, which is attributed to the impurity band, is changed to a fourfold symmetry by enhancing the quantum size effect in the valence band of the GaMnAs quantum wells. By combination with the gate electric-field control technique, our concept of the usage of the quantum size effect for the control of the magnetism will pave the way for the ultra-low-power manipulation of magnetization in future spintronic devices.UTokyo Research掲載「磁性をデザインする新たな手法を開拓」 URI: http://www.u-tokyo.ac.jp/ja/utokyo-research/research-news/pioneering-new-methods-for-designing-magnetism.htmlUTokyo Research "Pioneering new methods for designing magnetism" URI: http://www.u-tokyo.ac.jp/en/utokyo-research/research-news/pioneering-new-methods-for-designing-magnetism.htm

Efficient full spin–orbit torque switching in a single layer of a perpendicularly magnetized single-crystalline ferromagnet

UTokyo FOCUS Press releases "Small currents for big gains in spintronics : A new low-power magnetic switching component could aid spintronic devices" https://www.u-tokyo.ac.jp/focus/en/press/z0508_00053.htm