Flash-lag chimeras: the role of perceived alignment in the composite face effect

Spatial alignment of different face halves results in a configuration that mars the recognition of the identity of either face half (). What would happen to the recognition performance for face halves that were aligned on the retina but were perceived as misaligned, or were misaligned on the retina but were perceived as aligned? We used the 'flash-lag' effect () to address these questions. We created chimeras consisting of a stationary top half-face initially aligned with a moving bottom half-face. Flash-lag chimeras were better recognized than their stationary counterparts. However when flashed face halves were presented physically ahead of moving halves thereby nulling the flash-lag effect, recognition was impaired. This counters the notion that relative movement between the two face halves per se is sufficient to explain better recognition of flash-lag chimeras. Thus, the perceived spatial alignment of face halves (despite retinal misalignment) impairs recognition, while perceived misalignment (despite retinal alignment) does not

High-Q nanocavities in semiconductor-based three-dimensional photonic crystals

We experimentally demonstrated high quality factors (Q-factors) of nanocavities in three-dimensional photonic crystals by increasing the in-plane area of the structure. Entire structures made of GaAs were fabricated by a micro-manipulation technique, and the nanocavities contained InAs self-assembled quantum dots that emitted near-infrared light. The obtained Q-factor was improved to 93,000, which is 2.4-times larger than that in a previous report of a three-dimensional photonic crystal nanocavity. Due to this large Q-factor, we successfully observed a lasing oscillation from this cavity mode

Transfer-printed quantum-dot nanolasers on a silicon photonic circuit

Quantum-dot (QD) nanolasers integrated on a silicon photonic circuit are demonstrated for the first time. QD nanolasers based on one-dimensional photonic crystal nanocavities containing InAs/GaAs QDs are integrated on CMOS-processed silicon waveguides cladded by silicon dioxide. We employed transfer-printing, whereby the three-dimensional stack of photonic nanostructures is assembled in a simple pick-and-place manner. Lasing operation and waveguide-coupling of an assembled single nanolaser are confirmed through micro-photoluminescence spectroscopy. Furthermore, by repetitive transfer-printing, two QD nanolasers integrated onto a single silicon waveguide are demonstrated, opening a path to develop compact light sources potentially applicable for wavelength division multiplexing

Quantization of mode shifts in nanocavities integrated with atomically thin sheets

The unique optical properties of two-dimensional layered materials are attractive for achieving increased functionality in integrated photonics. Owing to the van der Waals nature, these materials are ideal for integrating with nanoscale photonic structures. Here we report on carefully designed air-mode silicon photonic crystal nanobeam cavities for efficient control through two-dimensional materials. By systematically investigating various types and thickness of two-dimensional materials, we are able to show that enhanced responsivity allows for giant shifts of the resonant wavelength. With atomically precise thickness over a macroscopic area, few-layer flakes give rise to quantization of the mode shifts. We extract the dielectric constant of the flakes and find that it is independent of the layer number down to a monolayer. Flexible reconfiguration of a cavity is demonstrated by stacking and removing ultrathin flakes. With an unconventional cavity design, our results open up new possibilities for photonic devices integrated with two-dimensional materials

Angle-Dependent Carrier Transmission in Graphene p–n Junctions

Angle-dependent carrier transmission probability in graphene p-n junctions is investigated. Using electrostatic doping from buried gates, p–n junctions are formed along graphene channels that are patterned to form different angles with the junction. A peak in the junction resistance is observed, which becomes pronounced with angle. This angular dependence is observed for junctions made on both exfoliated and CVD-grown graphene and is consistent with the theoretically predicted dependence of transmission probability on incidence angle

Gate-Defined Electron–Hole Double Dots in Bilayer Graphene

We present gate-controlled single-, double-, and triple-dot operation in electrostatically gapped bilayer graphene. Thanks to the recent advancements in sample fabrication, which include the encapsulation of bilayer graphene in hexagonal boron nitride and the use of graphite gates, it has become possible to electrostatically confine carriers in bilayer graphene and to completely pinch-off current through quantum dot devices. Here, we discuss the operation and characterization of electron–hole double dots. We show a remarkable degree of control of our device, which allows the implementation of two different gate-defined electron–hole double-dot systems with very similar energy scales. In the single-dot regime, we extract excited state energies and investigate their evolution in a parallel magnetic field, which is in agreement with a Zeeman-spin-splitting expected for a <i>g</i>-factor of 2

Gate-Defined Electron–Hole Double Dots in Bilayer Graphene

We present gate-controlled single-, double-, and triple-dot operation in electrostatically gapped bilayer graphene. Thanks to the recent advancements in sample fabrication, which include the encapsulation of bilayer graphene in hexagonal boron nitride and the use of graphite gates, it has become possible to electrostatically confine carriers in bilayer graphene and to completely pinch-off current through quantum dot devices. Here, we discuss the operation and characterization of electron–hole double dots. We show a remarkable degree of control of our device, which allows the implementation of two different gate-defined electron–hole double-dot systems with very similar energy scales. In the single-dot regime, we extract excited state energies and investigate their evolution in a parallel magnetic field, which is in agreement with a Zeeman-spin-splitting expected for a <i>g</i>-factor of 2

Self-aligned hybrid nanocavities using atomically thin materials

Two-dimensional (2D) van der Waals layered materials with intriguing properties are increasingly being adopted in hybrid photonics. The 2D materials are often integrated with photonic structures including cavities to enhance light-matter coupling, providing additional control and functionality. The 2D materials, however, needs to be precisely placed on the photonic cavities. Furthermore, the transfer of 2D materials onto the cavities could degrade the cavity quality $(Q)$ factor. Instead of using prefabricated PhC nanocavities, we demonstrate a novel approach to form a hybrid nanocavity by partially covering a PhC waveguide post-fabrication with a suitably-sized 2D material flake. We successfully fabricated such hybrid nanocavity devices with hBN, WSe$_2$ and MoTe$_2$ flakes on silicon PhC waveguides, obtaining $Q$ factors as high as $4.0\times10^5$. Remarkably, even mono- and few-layer flakes can provide sufficient local refractive index modulation to induce nanocavity formation. Since the 2D material is spatially self-aligned to the nanocavity, we have also managed to observe cavity PL enhancement in a MoTe$_2$ hybrid cavity device, with a cavity Purcell enhancement factor of about 15. Our results highlights the prospect of using such 2D materials-induced PhC nanocavity to realize a wide range of photonic components for hybrid devices and integrated photonic circuits

Quantum Wires and Waveguides Formed in Graphene by Strain

Confinement of electrons in graphene to make devices has proven to be a challenging task. Electrostatic methods fail because of Klein tunneling, while etching into nanoribbons requires extreme control of edge terminations, and bottom-up approaches are limited in size to a few nanometers. Fortunately, its mechanical flexibility raises the possibility of using strain to alter graphene’s properties and create novel straintronic devices. Here, we report transport studies of nanowires created by linearly-shaped strained regions resulting from individual folds formed by layer transfer onto hexagonal boron nitride. Conductance measurements across the folds reveal Coulomb blockade signatures, indicating confined charges within these structures, which act as quantum dots. Along folds, we observe sharp features in traverse resistivity measurements, attributed to an amplification of the dot conductance modulations by a resistance bridge incorporating the device. Our data indicates ballistic transport up to ∼1 μm along the folds. Calculations using the Dirac model including strain are consistent with measured bound state energies and predict the existence of valley-polarized currents. Our results show that graphene folds can act as straintronic quantum wires

Cavity-Enhanced 2D Material Quantum Emitters Deterministically Integrated with Silicon Nitride Microresonators

Optically active defects in 2D materials, such as hexagonal boron nitride (hBN) and transition-metal dichalcogenides (TMDs), are an attractive class of single-photon emitters with high brightness, operation up to room temperature, site-specific engineering of emitter arrays with strain and irradiation techniques, and tunability with external electric fields. In this work, we demonstrate a novel approach to precisely align and embed hBN and TMDs within background-free silicon nitride microring resonators. Through the Purcell effect, high-purity hBN emitters exhibit a cavity-enhanced spectral coupling efficiency of up to 46% at room temperature, exceeding the theoretical limit (up to 40%) for cavity-free waveguide-emitter coupling and demonstrating nearly a 1 order of magnitude improvement over previous work. The devices are fabricated with a CMOS-compatible process and exhibit no degradation of the 2D material optical properties, robustness to thermal annealing, and 100 nm positioning accuracy of quantum emitters within single-mode waveguides, opening a path for scalable quantum photonic chips with on-demand single-photon sources