Non-reciprocal absorption and zero reflection in physically separated dual photonic resonators by traveling-wave-induced indirect coupling

We experimentally explored novel behaviors of non-reciprocal absorption and almost zero reflection in a dual photon resonator system, which is physically separated and composed of two inverted split ring resonators (ISRRs) with varying inter-distances. We also found that an electromagnetically-induced-transparency (EIT)-like peak at a specific inter-distance of d = 18 mm through traveling waves flowing along a shared microstrip line to which the dual ISRRs are dissipatively coupled. With the aid of CST-simulations and analytical modeling, we found that destructive and/or constructive interferences in traveling waves, indirectly coupled to each ISRR, result in a traveling-wave-induced transparency peak within a narrow window. Furthermore, we observed not only strong non-reciprocal responses of reflectivity and absorptivity at individual inter-distances exactly at the corresponding EIT-like peak positions, but also nearly zero reflection and almost perfect absorption for a specific case of d = 20 mm. Finally, the unidirectional absorptions with zero reflection at d = 20 mm are found to be ascribed to a non-Hermitian origin. This work not only provides a better understanding of traveling-wave-induced indirect coupling between two photonic resonators without magnetic coupling, but also suggests potential implications for the resulting non-reciprocal behaviors of absorption and reflection in microwave circuits and quantum information devices

Additional file 1 of msPIPE: a pipeline for the analysis and visualization of whole-genome bisulfite sequencing data

Additional file 1. Supplementary figures

Additional file 2 of msPIPE: a pipeline for the analysis and visualization of whole-genome bisulfite sequencing data

Additional file 2. Supplementary tables

Enhanced Antimalarial and Antisequestration Activity of Methoxybenzenesulfonate-Modified Biopolymers and Nanoparticles for Tackling Severe Malaria

Severe malaria is a life-threatening condition that is associated with a high mortality. Severe Plasmodium falciparum infections are mediated primarily by high parasitemia and binding of infected red blood cells (iRBCs) to the blood vessel endothelial layer, a process known as sequestration. Here, we show that including the 5-amino-2-methoxybenzenesulfonate (AMBS) chemical modification in soluble biopolymers (polyglutamic acid and heparin) and poly(acrylic acid)-exposing nanoparticles serves as a universal tool to introduce a potent parasite invasion inhibitory function in these materials. Importantly, the modification did not add or eliminated (for heparin) undesired anticoagulation activity. The materials protected RBCs from invasion by various parasite strains, employing both major entry pathways. Two further P. falciparum strains, which either expose ligands for chondroitin sulfate A (CSA) or intercellular adhesion molecule 1 (ICAM-1) on iRBCs, were tested in antisequestration assays due to their relevance in placental and cerebral malaria, respectively. Antisequestration activity was found to be more efficacious with nanoparticles vs gold-standard soluble biopolymers (CSA and heparin) against both strains, when tested on receptor-coated dishes. The nanoparticles also efficiently inhibited and reversed the sequestration of iRBCs on endothelial cells. First, the materials described herein have the potential to reduce the parasite burden by acting at the key multiplication stage of reinvasion. Second, the antisequestration ability could help remove iRBCs from the blood vessel endothelium, which could otherwise cause vessel obstruction, which in turn can lead to multiple organ failure in severe malaria infections. This approach represents a further step toward creation of adjunctive therapies for this devastating condition to reduce morbidity and mortality

Realizing Electronic Synapses by Defect Engineering in Polycrystalline Two-Dimensional MoS₂ for Neuromorphic Computing

Neuromorphic computing based on two-dimensional transition-metal dichalcogenides (2D TMDs) has attracted significant attention recently due to their extraordinary properties generated by the atomic-thick layered structure. This study presents sulfur-defect-assisted MoS2 artificial synaptic devices fabricated by a simple sputtering process, followed by a precise sulfur (S) vacancy-engineering process. While the as-sputtered MoS2 film does not show synaptic behavior, the S vacancy-controlled MoS2 film exhibits excellent synapse with remarkable nonvolatile memory characteristics such as a high switching ratio (∼103), a large memory window, and long retention time (∼104 s) in addition to synaptic functions such as paired-pulse facilitation (PPF) and long-term potentiation (LTP)/depression (LTD). The synaptic device working mechanism of Schottky barrier height modulation by redistributing S vacancies was systemically analyzed by electrical, physical, and microscopy characterizations. The presented MoS2 synaptic device, based on the precise defect engineering of sputtered MoS2, is a facile, low-cost, complementary metal-oxide semiconductor (CMOS)-compatible, and scalable method and provides a procedural guideline for the design of practical 2D TMD-based neuromorphic computing

Quantitative Interpretation of Electromagnetic Interference Shielding Efficiency: Is It Really a Wave Absorber or a Reflector?

As electromagnetic (EM) pollution continues to increase, electromagnetic interference (EMI) shielding materials have been intensively evaluated in terms of two main shielding mechanisms of reflection and absorption. Since the shielding effectiveness (SE) is represented in the logarithmic scale and in a coupled way of transmission (SET), absorption (SEA), and reflection (SER), often there is a misinterpretation that the EM wave reflectors are regarded as EM wave-absorbing materials. Surprisingly, we found that many materials reported as an EM wave absorber in the literature provide, in fact, less than 50% of EM wave-absorbing capability, i.e., over 50% of EM wave-reflecting feature. According to the theory and definition of EMI SE, the absorption-dominant EMI shielding materials should have the ratio of absorption to incident energy (A) as A > 0.5, which corresponds to a necessary condition that SER R subsequently gives SEA in relation to SET. Using this criterion, we classified the EMI shielding materials with their shielding mechanism. The proposed methodology provides significant insight into the evaluation and development of EMI shielding materials

Near-Field Electrospinning for Three-Dimensional Stacked Nanoarchitectures with High Aspect Ratios

Near-field electrospinning (NFES) was developed to overcome the intrinsic instability of traditional electrospinning processes and to facilitate the controllable deposition of nanofibers under a reduced electric field. This technique offers a straightforward and versatile method for the precision patterning of two-dimensional (2D) nanofibers. However, three-dimensional (3D) stacked structures built by NFES have been limited to either micron-scale sizes or special shapes. Herein, we report on a direct-write 3D NFES technique to construct self-aligned, template-free, 3D stacked nanoarchitectures by simply adding salt to the polymer solution. Numerical simulations suggested that the electric field could be tuned to achieve self-aligned nanofibers by adjusting the conductivity of the polymer solution. This was confirmed experimentally by using poly­(ethylene oxide) (PEO) solutions containing 0.1–1.0 wt% NaCl. Using 0.1 wt% NaCl, nanowalls with a maximum of 80 layers could be built with a width of 92 ± 3 nm, height of 6.6 ± 0.1 μm, and aspect ratio (height/width) of 72. We demonstrate the 3D printing of nanoskyscrapers with various designs, such as curved “nanowall arrays”, nano “jungle gyms,” and “nanobridges”. Further, we present an application of the 3D stacked nanofiber arrays by preparing transparent and flexible polydimethylsiloxane films embedded with Ag-sputtered nanowalls as 3D nanoelectrodes. The conductivity of the nanoelectrodes can be precisely tuned by adjusting the number of 3D printed layers, without sacrificing transmittance (98.5%). The current NFES approach provides a simple, reliable route to build 3D stacked nanoarchitectures with high-aspect ratios for potential application in smart materials, energy devices, and biomedical applications

Near-Field Electrospinning for Three-Dimensional Stacked Nanoarchitectures with High Aspect Ratios

Near-field electrospinning (NFES) was developed to overcome the intrinsic instability of traditional electrospinning processes and to facilitate the controllable deposition of nanofibers under a reduced electric field. This technique offers a straightforward and versatile method for the precision patterning of two-dimensional (2D) nanofibers. However, three-dimensional (3D) stacked structures built by NFES have been limited to either micron-scale sizes or special shapes. Herein, we report on a direct-write 3D NFES technique to construct self-aligned, template-free, 3D stacked nanoarchitectures by simply adding salt to the polymer solution. Numerical simulations suggested that the electric field could be tuned to achieve self-aligned nanofibers by adjusting the conductivity of the polymer solution. This was confirmed experimentally by using poly­(ethylene oxide) (PEO) solutions containing 0.1–1.0 wt% NaCl. Using 0.1 wt% NaCl, nanowalls with a maximum of 80 layers could be built with a width of 92 ± 3 nm, height of 6.6 ± 0.1 μm, and aspect ratio (height/width) of 72. We demonstrate the 3D printing of nanoskyscrapers with various designs, such as curved “nanowall arrays”, nano “jungle gyms,” and “nanobridges”. Further, we present an application of the 3D stacked nanofiber arrays by preparing transparent and flexible polydimethylsiloxane films embedded with Ag-sputtered nanowalls as 3D nanoelectrodes. The conductivity of the nanoelectrodes can be precisely tuned by adjusting the number of 3D printed layers, without sacrificing transmittance (98.5%). The current NFES approach provides a simple, reliable route to build 3D stacked nanoarchitectures with high-aspect ratios for potential application in smart materials, energy devices, and biomedical applications

All-Cellulose Paper with High Optical Transmittance and Haze Fabricated via Electrophoretic Deposition

Reducing the thickness of transparent paper without losing its outstanding optical haze and transmittance remains a challenge due to their trade-off relationship. Herein, an all-cellulose transparent paper composed of cellulose nanofibril (CNF) and carboxymethyl cellulose (CMC) is developed by electrophoretic deposition (EPD) thanks to the good film-forming ability of the CMC. The thickness of the paper can be controlled in the range of 2.4–30 μm depending on the applied voltage and deposition time. The optical properties and mechanical strength are adjusted by the sonication time and the ratio between CNF and CMC, since the CNF works as a light-scattering source and mechanical reinforcement agent. Consequently, a robust all-cellulose paper with a thickness of 10 μm exhibiting high transmittance (up to 96%) and haze (up to 89%) is successfully fabricated. As our paper has competitive optical properties despite the thinner thickness than other reported all-cellulose transparent and hazy paper, we achieved the highest optical haze and transmittance values per unit thickness. We believe that this all-cellulose paper with outstanding optical properties has great potential to be applied to many fields that include flexible devices, environmentally friendly electronics, optoelectronics, and other functional devices