Table_1_FGFR4 Gly388Arg Polymorphism Reveals a Poor Prognosis, Especially in Asian Cancer Patients: A Meta-Analysis.docx

The fibroblast growth factor-4 receptor (FGFR4) is a member of receptor tyrosine kinase. The FGFR4 Gly388Arg polymorphism in the transmembrane domain of the receptor has been shown to increase genetic susceptibility to cancers. However, its prognostic impact in cancer patients still remains controversial. Herein, we performed this meta-analysis to evaluate the clinicopathological and prognostic impacts of the FGFR4 Gly388Arg polymorphism in patients with cancer. We carried out a computerized extensive search using PubMed, Medline, and Ovid Medline databases up to July 2021. From 44 studies, 11,574 patients were included in the current meta-analysis. Regardless of the genetic models, there was no significant correlation of the FGFR4 Gly388Arg polymorphism with disease stage 3/4. In the homozygous model (Arg/Arg vs. Gly/Gly), the Arg/Arg genotype tended to show higher rate of lymph node metastasis compared with the Gly/Gly genotype (odds ratio = 1.21, 95% confidence interval (CI): 0.99-1.49, p = 0.06). Compared to patients with the Arg/Gly or Arg/Arg genotype, those with the Gly/Gly genotype had significantly better overall survival (hazard ratios (HR) = 1.19, 95% CI: 1.05-1.35, p = 0.006) and disease-free survival (HR = 1.25, 95% CI: 1.03-1.53, p = 0.02). In conclusion, this meta-analysis showed that the FGFR4 Gly388Arg polymorphism was significantly associated with worse prognosis in cancer patients. Our results suggest that this polymorphism may be a valuable genetic marker to identify patients at higher risk of recurrence or mortality.</p

Robust Heteroepitaxial Growth of GaN Formulated on Porous TiN Buffer Layers

Gallium nitride (GaN) heteroepitaxial growth is widely studied as a semiconductor material due to its various benefits. Especially, development of a buffer layer between GaN and the substrate verifies to be an effective strategy to reduce high threading dislocation density. However, the buffer layer often impedes strong adhesion between the epilayer and foreign substrate because thermally induced residual stress often causes delamination of the epilayer during fabrication. Here, we developed a robust GaN heteroepitaxy employing a porous buffer layer formulated by hydride vapor phase epitaxy. A sufficiently low but completely coated thin Ti layer was deposited on the sapphire substrate, which led to a rough and porous TiN layer after nitridation. This porous structure enables the penetration of the GaN source into the porous structure, allowing GaN epitaxy initiation throughout the TiN layer. As a result, GaN crystal growth can fill the porous area during the GaN heteroepitaxy. Integrated visualization demonstrated that the voids were successfully removed by GaN infiltration, enabling the heteroepitaxial structure to show little deformation, confirmed by multiple indentations. Last, the void-free GaN heteroepitaxy with the porous TiN buffer layer displayed robust adhesion after delamination tests

Robust Heteroepitaxial Growth of GaN Formulated on Porous TiN Buffer Layers

Gallium nitride (GaN) heteroepitaxial growth is widely studied as a semiconductor material due to its various benefits. Especially, development of a buffer layer between GaN and the substrate verifies to be an effective strategy to reduce high threading dislocation density. However, the buffer layer often impedes strong adhesion between the epilayer and foreign substrate because thermally induced residual stress often causes delamination of the epilayer during fabrication. Here, we developed a robust GaN heteroepitaxy employing a porous buffer layer formulated by hydride vapor phase epitaxy. A sufficiently low but completely coated thin Ti layer was deposited on the sapphire substrate, which led to a rough and porous TiN layer after nitridation. This porous structure enables the penetration of the GaN source into the porous structure, allowing GaN epitaxy initiation throughout the TiN layer. As a result, GaN crystal growth can fill the porous area during the GaN heteroepitaxy. Integrated visualization demonstrated that the voids were successfully removed by GaN infiltration, enabling the heteroepitaxial structure to show little deformation, confirmed by multiple indentations. Last, the void-free GaN heteroepitaxy with the porous TiN buffer layer displayed robust adhesion after delamination tests

Robust Heteroepitaxial Growth of GaN Formulated on Porous TiN Buffer Layers

Gallium nitride (GaN) heteroepitaxial growth is widely studied as a semiconductor material due to its various benefits. Especially, development of a buffer layer between GaN and the substrate verifies to be an effective strategy to reduce high threading dislocation density. However, the buffer layer often impedes strong adhesion between the epilayer and foreign substrate because thermally induced residual stress often causes delamination of the epilayer during fabrication. Here, we developed a robust GaN heteroepitaxy employing a porous buffer layer formulated by hydride vapor phase epitaxy. A sufficiently low but completely coated thin Ti layer was deposited on the sapphire substrate, which led to a rough and porous TiN layer after nitridation. This porous structure enables the penetration of the GaN source into the porous structure, allowing GaN epitaxy initiation throughout the TiN layer. As a result, GaN crystal growth can fill the porous area during the GaN heteroepitaxy. Integrated visualization demonstrated that the voids were successfully removed by GaN infiltration, enabling the heteroepitaxial structure to show little deformation, confirmed by multiple indentations. Last, the void-free GaN heteroepitaxy with the porous TiN buffer layer displayed robust adhesion after delamination tests

Robust Heteroepitaxial Growth of GaN Formulated on Porous TiN Buffer Layers

Gallium nitride (GaN) heteroepitaxial growth is widely studied as a semiconductor material due to its various benefits. Especially, development of a buffer layer between GaN and the substrate verifies to be an effective strategy to reduce high threading dislocation density. However, the buffer layer often impedes strong adhesion between the epilayer and foreign substrate because thermally induced residual stress often causes delamination of the epilayer during fabrication. Here, we developed a robust GaN heteroepitaxy employing a porous buffer layer formulated by hydride vapor phase epitaxy. A sufficiently low but completely coated thin Ti layer was deposited on the sapphire substrate, which led to a rough and porous TiN layer after nitridation. This porous structure enables the penetration of the GaN source into the porous structure, allowing GaN epitaxy initiation throughout the TiN layer. As a result, GaN crystal growth can fill the porous area during the GaN heteroepitaxy. Integrated visualization demonstrated that the voids were successfully removed by GaN infiltration, enabling the heteroepitaxial structure to show little deformation, confirmed by multiple indentations. Last, the void-free GaN heteroepitaxy with the porous TiN buffer layer displayed robust adhesion after delamination tests

Differences in selecting symptom items of the DN4 questionnaire between the NCP (N = 722) and non-NCP (N = 1,281) groups.

Differences in selecting symptom items of the DN4 questionnaire between the NCP (N = 722) and non-NCP (N = 1,281) groups.</p

Comparison of patients receiving/not receiving chemotherapy and age <65 or ≥65 years.

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Clinical predictors of patients with NCP (N = 2,003).

Clinical predictors of patients with NCP (N = 2,003).</p

Characteristics of neuropathic pain only in NCP patients in the presence or absence of the clinical predictors of NCP^†.

Characteristics of neuropathic pain only in NCP patients in the presence or absence of the clinical predictors of NCP†.</p

Comparison of the characteristics between the NCP and non-NCP groups (N = 2,003).

Comparison of the characteristics between the NCP and non-NCP groups (N = 2,003).</p