19 research outputs found

    Correction to “Dual-Surfactant-Capped Ag Nanoparticles as a Highly Selective and Sensitive Colorimetric Sensor for Citrate Detection”

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    Correction to “Dual-Surfactant-Capped Ag Nanoparticles as a Highly Selective and Sensitive Colorimetric Sensor for Citrate Detection

    Fig 2 -

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    Relationship between UACR and cardiometabolic risk factors in Korean women (A) and men (B). Beta values were measured by linear regression after setting continuous variables, including age, TC, HDL-C, and SBP as dependent variables and UACR subgroups as independent variables. In case of features exhibiting binomial distribution, such as AHM use, smoking, and diabetes, the ratio of presence of disease or status was set as the dependent variable in the linear regression for the calculation of the Beta value. Abbreviations: UACR, urinary albumin-creatinine ratio; Beta, beta-coefficient; AHM, anti-hypertensive medication; HDL-C. high-density lipoprotein-cholesterol; SBP, systolic blood pressure; TC, total cholesterol.</p

    Sex-specific characteristics according to UACR tertile.

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    Sex-specific characteristics according to UACR tertile.</p

    S1 Fig -

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    Distribution of urine albumin (upper two figures), urinary creatinine (middle figure), and urinary albumin creatinine ratio (lower two figures) in Korean women. (DOCX)</p

    Fig 1 -

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    UACRs according to CVD status in Korean women (A) and men (B). Left side boxplots (grey and brown colored boxes) indicate median-based summary statistics; specifically, the middle, upper, and lower lines describe median, 75, and 25 percentile values, respectively. Right side boxplots indicate mean-based summary statistics, in which the middle, upper, and lower lines illustrate mean, one standard deviation values, respectively.</p

    Fig 3 -

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    Relationship between albuminuria and cardiometabolic risk factors in Korean women (A) and men (B). Top four graphs (i.e., age, TC, HDL-C, SBP) were obtained by multivariate linear regression after setting the four predictors arranged separately as dependent variables. UACR was determined as the independent variable, and other remnant six predictors as covariates. The lower three graphs (i.e., AHM, smoking, diabetes) were obtained by multivariate logistic regression set to the same conditions as the multivariate linear regression. All x-axes indicate beta-coefficients obtained from the multivariate linear or logistic regressions. UACR levels were log-transformed for the associational analyses. Abbreviations: TC, total cholesterol; HDL-C, high-density lipoprotein cholesterol; SBP, systolic blood pressure; HTN Med, hypertension medication; DM, diabetes mellitus.</p

    S2 Fig -

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    Distribution of urine albumin (upper two figures), urinary creatinine (middle figure), and urinary albumin creatinine ratio (lower two figures) in Korean men. (DOCX)</p

    Fig 4 -

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    Relationship between albuminuria and FRS in Korean women (A) and men (B). Urine albumin-to-creatine ratio was categorized into 20 groups (x-axes) based on ascending order. FRS was calculated based on the equation provided by a study [22]. Abbreviation: FRS, Framingham risk score.</p

    Hierarchical Nanoflake Surface Driven by Spontaneous Wrinkling of Polyelectrolyte/Metal Complexed Films

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    A mechanical or physical change observed in nanocomposite thin films has recently offered new opportunities to generate intriguing nanostructures. In this study, we present a novel means of creating a hierarchically developed nanoflake structure by exploiting surface wrinkles that occur during the incorporation process of metallic nanoparticles into layer-by-layer assembled polyelectrolyte multilayer (PEM) thin films. The PEM film composed with linear polyethylenimine (LPEI) and poly(acrylic acid) (PAA) allows for facilitated cationic exchange reaction within the film even after the electrostatic complexation and chemical cross-linking reaction. The subsequent reduction process induces an <i>in situ</i> complexation of metallic nanoparticles with a PEM matrix, causing an accumulation of lateral compressive stress for surface wrinkling. The wrinkling characteristics of the complexed films can be theoretically interpreted by employing the gradationally swollen film model, whereby a gradual change in the elastic property along the axial direction of the film can be appropriately reflected. In addition, wrinkled surfaces are further processed to form vertically aligned and hierarchically ordered nanoflakes after selective removal of the PEM matrix with plasma ashing. Consequently, superhydrophobic surface properties (water contact angle = 170°, sliding angle <1°) can be attained from the hierarchical nanoflake structure. The method presented here is advantageous in that large-scale preparation can be readily implemented by a stepwise dipping process without resorting to specific patterning or a serially applied complex structuring process, which can provide a promising platform technique for various surface engineering applications

    Defect-Free Copolymer Gate Dielectrics for Gating MoS<sub>2</sub> Transistors

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    In this study, the poly­(2,4,6,8-tetramethyl-2,4,6,8-tetravinylcyclotetrasiloxane-<i>co</i>-cyclohexyl methacrylate) [p­(V4D4-<i>co</i>-CHMA)] copolymer was developed for use as a gate dielectric in molybdenum disulfide (MoS<sub>2</sub>) field-effect transistors (FETs). The p­(V4D4-<i>co</i>-CHMA) copolymer was synthesized via the initiated chemical vapor deposition (<i>i</i>CVD) of two types of monomers: 2,4,6,8-tetramethyl-2,4,6,8-tetravinylcyclotetrasiloxane (V4D4) and cyclohexyl methacrylate (CHMA). Four vinyl groups of V4D4 monomers and cyclohexyl groups of CHMA monomers were introduced to enhance the electrical strength of gate dielectrics through the formation of a highly crosslinked network and to reduce the charge trap densities at the MoS<sub>2</sub>–dielectric interface, respectively. The <i>i</i>CVD-grown p­(V4D4-<i>co</i>-CHMA) copolymer films yielded a dielectric constant of 2.3 and a leakage current of 3.8 × 10<sup>–11</sup> A/cm<sup>2</sup> at 1 MV/cm. The resulting MoS<sub>2</sub> FETs with p­(V4D4-<i>co</i>-CHMA) gate dielectrics exhibited excellent electrical properties, including an electron mobility of 35.1 cm<sup>2</sup>/V s, a subthreshold swing of 0.2 V/dec, and an on–off current ratio of 2.6 × 10<sup>6</sup>. In addition, the environmental and operational stabilities of MoS<sub>2</sub> FETs with p­(V4D4-<i>co</i>-CHMA) top-gate dielectrics were superior to those of devices with SiO<sub>2</sub> back-gate dielectrics. The use of <i>i</i>CVD-grown copolymer gate dielectrics as demonstrated in this study provides a novel approach to realizing next-generation two-dimensional electronics
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