1,552 research outputs found

    Vibration suppression for monopile and spar-buoy offshore wind turbines using the structure-immittance approach

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    Offshore wind turbines have the potential to capture the high-quality wind resource. However, the significant wind and wave excitations may result in excessive vibrations and decreased reliability. To reduce vibrations, passive structural control devices, such as the tuned mass damper (TMD), have been used. To further enhance the vibration suppression capability, inerter-based absorbers (IBAs) have been studied using the structure-based approach, that is, proposing specific stiffness-damping-inertance elements layouts for investigation. Such an approach has a critical limitation of being only able to cover specific IBA layouts, leaving numerous beneficial configurations not identified. This paper adopts the newly introduced structure-immittance approach, which is able to cover all network layout possibilities with a predetermined number of elements. Linear monopile and spar-buoy turbine models are first established for optimisation. Results show that the performance improvements can be up to 6.5% and 7.3% with four and six elements, respectively, compared with the TMD. Moreover, a complete set of beneficial IBA layouts with explicit element types and numbers have been obtained, which is essential for next-step real-life applications. In order to verify the effectiveness of the identified absorbers with OpenFAST, an approach has been established to integrate any IBA transfer functions. It has been shown that the performance benefits preserve under both the fatigue limit state (FLS) and the ultimate limit state (ULS). Furthermore, results show that the mass component of the optimum IBAs can be reduced by up to 25.1% (7,486 kg) to achieve the same performance as the TMD

    Model-based Aeroservoelastic Design and Load Alleviation of Large Wind Turbine Blades

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    This paper presents an aeroservoelastic modeling approach for dynamic load alleviation in large wind turbines with trailing-edge aerodynamic surfaces. The tower, potentially on a moving base, and the rotating blades are modeled using geometrically non-linear composite beams, which are linearized around reference conditions with arbitrarily-large structural displacements. Time-domain aerodynamics are given by a linearized 3-D unsteady vortexlattice method and the resulting dynamic aeroelastic model is written in a state-space formulation suitable for model reductions and control synthesis. A linear model of a single blade is used to design a Linear-Quadratic-Gaussian regulator on its root-bending moments, which is finally shown to provide load reductions of about 20% in closed-loop on the full wind turbine non-linear aeroelastic model

    Microbiota of Tayohounta, a fermented baobab flavour food of Benin

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    The present work provides data on the microbial composition of Tayohounta, a product of natural fermentation of baobab seed kernels. Samples were collected from 3 different small scale producers from Benin at the end of the fermentation process. Microorganisms were enumerated and identified using phenotypic and molecular approaches. Tayohounta was also investigated using culture independent techniques, direct DNA extraction, polymerase chain reaction - denaturing gradient gel electrophoresis (PCR-DGGE) and cloning. Isolated microorganisms were tested for their functionality in baobab seed kernels fermentation. Total viable counts were around 9 log cfu/g representing mainly Bacillus spp., whereas lactic acid bacteria (LAB) (8 log cfu/g), yeasts and moulds represent a smaller part of the total flora in all Tayohounta samples. Sequencing of clones of polymerase chain reaction (PCR) products of bacterial DNA directly extracted from Tayohounta revealed large differences between the products made by different producers. In all products, Bacillus licheniformis, B. pumilus, B. subtilis, B. thermoamylovorans and Lactobacillus fermentum were present. Other microorganisms (B. thuringiensis, Brevibacterium borstelensis, Enterococcus casseliflavus, E. durans, Lb. agilis, Pediococcus pentosaceus, Streptococcus equinus and Weissella confusa) were present occasionally. In experimental pure culture fermentations, B. subtilis showed little effect on pH, but degraded protein and caused a typical pungent smell typical of Tayohounta

    Electronic spin drift in graphene field effect transistors

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    We studied the drift of electron spins under an applied DC electric field in single layer graphene spin valves in a field effect transport geometry at room temperature. In the metallic conduction regime (n3.5×1016n \simeq 3.5 \times 10^{16} m2^{-2}), for DC fields of about ±\pm70 kV/m applied between the spin injector and spin detector, the spin valve signals are increased/decreased, depending on the direction of the DC field and the carrier type, by as much as ±\pm50%. Sign reversal of the drift effect is observed when switching from hole to electron conduction. In the vicinity of the Dirac neutrality point the drift effect is strongly suppressed. The experiments are in quantitative agreement with a drift-diffusion model of spin transport.Comment: 4 figure

    Controlling the efficiency of spin injection into graphene by carrier drift

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    Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room temperature non-local spin valve measurements in cobalt/aluminum-oxide/graphene structures with an injection efficiency as high as 25%, where electrical contact is achieved through relatively transparent pinholes in the oxide. This value is further enhanced to 43% by applying a DC current bias on the injector electrodes, that causes carrier drift away from the contact. A reverse bias reduces the AC spin valve signal to zero or negative values. We introduce a model that quantitatively predicts the behavior of the spin accumulation in the graphene under such circumstances, showing a good agreement with our measurements.Comment: 4 pages, 3 color figure

    Linear scaling between momentum and spin scattering in graphene

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    Spin transport in graphene carries the potential of a long spin diffusion length at room temperature. However, extrinsic relaxation processes limit the current experimental values to 1-2 um. We present Hanle spin precession measurements in gated lateral spin valve devices in the low to high (up to 10^13 cm^-2) carrier density range of graphene. A linear scaling between the spin diffusion length and the diffusion coefficient is observed. We measure nearly identical spin- and charge diffusion coefficients indicating that electron-electron interactions are relatively weak and transport is limited by impurity potential scattering. When extrapolated to the maximum carrier mobilities of 2x10^5 cm^2/Vs, our results predict that a considerable increase in the spin diffusion length should be possible

    Large yield production of high mobility freely suspended graphene electronic devices on a PMGI based organic polymer

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    The recent observation of fractional quantum Hall effect in high mobility suspended graphene devices introduced a new direction in graphene physics, the field of electron-electron interaction dynamics. However, the technique used currently for the fabrication of such high mobility devices has several drawbacks. The most important is that the contact materials available for electronic devices are limited to only a few metals (Au, Pd, Pt, Cr and Nb) since only those are not attacked by the reactive acid (BHF) etching fabrication step. Here we show a new technique which leads to mechanically stable suspended high mobility graphene devices which is compatible with almost any type of contact material. The graphene devices prepared on a polydimethylglutarimide based organic resist show mobilities as high as 600.000 cm^2/Vs at an electron carrier density n = 5.0 10^9 cm^-2 at 77K. This technique paves the way towards complex suspended graphene based spintronic, superconducting and other types of devices.Comment: 14 pages, 4 figure
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