6 research outputs found
A d‑Band Electron Correlated Thermoelectric Thermistor Established in Metastable Perovskite Family of Rare-Earth Nickelates
The
d-band electron correlations shed a light on bridging multiple
functionalities within one material system, and this further extends
the horizon in material designs and their emerging device applications.
Herein, we demonstrate the combination of thermoelectric and thermistor
functionalities within the perovskite family of correlated rare-earth
nickelates (ReNiO3) having small rare-earth
elements (i.e., YNiO3 and DyNiO3), in addition
to their already known metal-to-insulator transitions. In contrast
to conventional semiconductive materials, the electronic band structure
of ReNiO3 split within the hybridized
Ni3d–O2p is closely coupled to the structure of NiO6 octahedron. Based on such a distinguished feature, it is possible
to achieve the coexistence of a large magnitude of thermopower (S) and negative temperature coefficient of resistance (NTCR)
in the insulating phase of ReNiO3 with
small Re and more distorted NiO6 octahedron.
This establishes a thermoelectric thermistor that can be used for
sensing the thermal perturbations by integrating the two distinguished
detection modes within one system: the active mode utilizing the high
NTCR, and the passive mode utilizing the large S.
It is worth noticing that as-achieved S-NTCR relationship
in ReNiO3 differs form the one for conventional
semiconductors, in which cases enlarging the band gap enlarges S but reduces NTCR. As achieved thermoelectric thermistor
combing thermistor and thermoelectric functionalities via electron
correlation opens up a new direction to explore emerging energy/electronic
devices for sensing the thermal perturbations. The temperature range
that keeps a high thermoelectric thermistor performance (i.e., |TCR
| >2%K–1 and meanwhile S >
100
μVK–1) of ReNiO3 with a small rare-earth radius is possible to cover most of the
outdoor conditions on earth (i.e., −50 to 150 °C)
Revealing the Anisotropy in Protonation-Induced Electronic Phase Transitions of Rare-Earth Nickelates within a Marine Environment
Although the discovery of the electrochemical protonation-induced
electronic phase transition of rare-earth nickelates (ReNiO3) enables potential application in sensing the ocean
electric field that simulates the working principle of the ampullary
organ of marine animals, whether such a functionality is anisotropic
is previously overlooked. Herein, we demonstrate the anisotropy in
the protonation-induced electronic phase transition in ReNiO3 (Re = Sm, Nd, and Eu) thin films
as electrochemically triggered in an ocean environment. A larger elevation
in the material resistivity triggered by an electric field within
an ocean environment is observed for ReNiO3/LaAlO3(110), compared to ReNiO3/LaAlO3(001) and ReNiO3/LaAlO3(111). This is attributed to the orientation-related in-plane
oxygen atomic density that results in more effective in-plane proton
diffusion along the adjacent oxygen position, as further confirmed
by the electrochemical cyclic voltammetry characterization. In addition,
the larger activation energy associated to the anisotropic in-plane
electronic structures of ReNiO3/LaAlO3(110) is also expected to promote the formation of electron-localized
orbital configurations upon hydrogenation. As demonstrated, anisotropy
sheds light on another possibility that can be further introduced
to regulate the protonation-induced electronic phase transition properties
of ReNiO3 for its potential applications
such as ocean electric field sensing or biosensing
Rare-Earth Regulation in the Crystal Structure, Electronic Structure, and Metal-To-Insulator Transitions of the High Oxygen Pressure-Annealed <i>Re</i><sub>0.33</sub>Sr<sub>0.67</sub>FeO<sub>3</sub>
The complex electromagnetic phase
diagram of iron-based
perovskites,
e.g., Re0.33Sr0.67FeO3 (Re stands for rare earth), exhibits a charge/spin
ordering transition that enables metal insulator transitions (MIT)
beyond conventional oxide semiconductors. While the previous investigations
focused on Re0.33Sr0.67FeO3 with light or middle rare-earth compositions, Re0.33Sr0.67FeO3 containing heavy
rare-earth elements beyond Gd have not yet been synthesized owing
to their larger intrinsic metastability. Herein, we effectively synthesize Re0.33Sr0.67FeO3 covering
a large variety of rare-earth elements (e.g., Re =
La–Dy) by first forming an oxygen-deficient Re0.33Sr0.67FeO3‑δ framework
via conventional solid-state reactions in air and afterward high-oxygen-pressure
post annealing that compensates the oxygen composition. Compared to
the ones with light or middle rare-earth compositions (e.g., Nd–Eu),
the crystal structures of Re0.33Sr0.67FeO3 containing heavy rare-earth compositions
(e.g., Dy) change from the space group Imma to R3̅c, while a larger amount of oxygen
vacancy is also expected. Consequently, the potentially more distorted
FeO6 octahedron is expected to be balanced by the tendency
of generating the oxygen vacancy within Re0.33Sr0.67FeO3 containing heavy rare-earth compositions.
The heavy rare-earth compositions elevate the Mott temperature T0 and activation energy EA in their carrier transportations and eliminate their MIT
property. Further, on combining with the near-edge X-ray absorption
fine-structure analysis, an abrupt variation is observed in the Fe-L edge and O-K edge across Re = Sm, and this reflects the boundary of MIT in the material family
of Re0.33Sr0.67FeO3 when varying the rare-earth compositions. Therefore, pronounced
MIT performance is achieved in Re0.33Sr0.67FeO3 with light rare-earth compositions and
a low oxygen vacancy
Non-equilibrium Spark Plasma Reactive Doping Enables Highly Adjustable Metal-to-Insulator Transitions and Improved Mechanical Stability for VO<sub>2</sub>
Although
vanadium dioxide (VO2) exhibits the
most abrupt
metal-to-insulator transition (MIT) properties near room temperature,
the present regulation of their MIT functionalities is insufficient
owing to the high complexity and susceptibility associated with V4+. Herein, we demonstrate a spark plasma-assisted reactive
sintering approach to simultaneously achieve in situ doping and sintering of VO2 within a largely short period
(∼10 min). This enables high convenience and flexibility in
regulating the electronic structure of VO2via dopant elements covering Ti, W, Nb, Mo, Cr, and Fe, leading to a
wide adjustment in their MIT temperature (TMIT) and basic resistivity (ρ). Furthermore, the mechanical strength
of the doped VO2 is meanwhile largely improved via the compositing effect of the high-melting-point dopant
oxide. The high adjustability in MIT properties and improved mechanical
properties further pave the way toward practical applications of VO2 in power electronics, thermochromism, and infrared camouflage
Revealing the Role of the Tetragonal Distortion in the Metal–Insulator Transition of Co- and Fe-Doped NiS
Although
the NiS exhibits the most widely adjustable
metal-to-insulator
(MIT) properties among the chalcogenides, the mechanisms, with respect
to the regulations in their critical temperatures (TMIT), are yet unclear. Herein, we demonstrate the overlooked
role associated with the structurally tetragonal distortion in elevating
the TMIT of NiS; this is in distinct contrast
to the previously expected hybridization and bandwidth regulations
that usually reduces TMIT. Compared to
the perspective of structure distortions, the orbital hybridization
and band regulation of NiS are ∼19 times more effective adjustment
in TMIT. As a result, the respective abruptions
in both the electrical and thermal resistive switches across the TMIT of NiS can be better preserved in the low-temperature
range (<273 K), shedding light on their optimum usage at cryogenic
temperatures
Superlow Thermal Conductivity 3D Carbon Nanotube Network for Thermoelectric Applications
Electrical and thermal transportation properties of a
novel structured
3D CNT network have been systematically investigated. The 3D CNT net
work maintains extremely low thermal conductivity of only 0.035 W/(m
K) in standard atmosphere at room temperature, which is among the
lowest compared with other reported CNT macrostructures. Its electrical
transportation could be adjusted through a convenient gas-fuming doping
process. By potassium (K) doping, the original p-type CNT network
converted to n-type, whereas iodine (I<sub>2</sub>) doping enhanced
its electrical conductivity. The self-sustainable homogeneous network
structure of as-fabricated 3D CNT network made it a promising candidate
as the template for polymer composition. By in situ nanoscaled composition
of 3D CNT network with polyaniline (PANI), the thermoelectric performance
of PANI was significantly improved, while the self-sustainable and
flexible structure of the 3D CNT network has been retained. It is
hoped that as-fabricated 3D CNT network will contribute to the development
of low-cost organic thermoelectric area
