Thermoelectric properties of delafossite-type layered oxides AgIn1–xSnxO2

The thermoelectric properties of delafossite-type layered oxides AgIn1–xSnxO2 that consist of alternating layers of Ag and In1–xSnxO2 were investigated to elucidate their potential as a thermoelectric material. Polycrystalline materials of the AgIn1–xSnxO2 were prepared by a cation exchange reaction between NaIn1–xSnxO2 and AgCl. The solubility limit of the Sn atoms on the In sites was approximately x=0.05. The electrical conductivity and Seebeck coefficient were measured between 373 and 673 K in air. Undoped AgInO2 was an n-type semiconductor with conductivities of 10–4–10–2 –1 cm–1, and the electron carriers were generated via the formation of oxygen vacancies. AgIn0.95Sn0.05O2 was an n-type degenerate semiconductor with conductivities of 100–101 –1 cm–1 where the Sn atoms acted as electron donors. This drastic increase in the electrical conductivity increased the thermoelectric power factor by approximately two orders of magnitude to 10–6–10–5 W m–1 K–2

Thermoelectric properties of delafossite-type layered oxides AgIn1–xSnxO2

The thermoelectric properties of delafossite-type layered oxides AgIn1–xSnxO2 that consist of alternating layers of Ag and In1–xSnxO2 were investigated to elucidate their potential as a thermoelectric material. Polycrystalline materials of the AgIn1–xSnxO2 were prepared by a cation exchange reaction between NaIn1–xSnxO2 and AgCl. The solubility limit of the Sn atoms on the In sites was approximately x=0.05. The electrical conductivity and Seebeck coefficient were measured between 373 and 673 K in air. Undoped AgInO2 was an n-type semiconductor with conductivities of 10–4–10–2 –1 cm–1, and the electron carriers were generated via the formation of oxygen vacancies. AgIn0.95Sn0.05O2 was an n-type degenerate semiconductor with conductivities of 100–101 –1 cm–1 where the Sn atoms acted as electron donors. This drastic increase in the electrical conductivity increased the thermoelectric power factor by approximately two orders of magnitude to 10–6–10–5 W m–1 K–2

Essential roles of class E Vps proteins for sorting into multivesicular bodies in Schizosaccharomyces pombe

The multivesicular body (MVB) sorting pathway is required for a number of biological processes, including downregulation of cell-surface proteins and protein sorting into the vacuolar lumen. The function of this pathway requires endosomal sorting complexes required for transport (ESCRT) composed of class E vacuolar protein sorting (Vps) proteins in Saccharomyces cerevisiae, many of which are conserved in Schizosaccharomyces pombe. Of these, sst4/vps27 (homologous to VPS27) and sst6 (similar to VPS23) have been identified as suppressors of sterility in ste12Δ (sst), although their functions have not been uncovered to date. In this report, these two sst genes are shown to be required for vacuolar sorting of carboxypeptidase Y (CPY) and an MVB marker, the ubiquitin–GFP–carboxypeptidase S (Ub–GFP–CPS) fusion protein, despite the lack of the ubiquitin E2 variant domain in Sst6p. Disruption mutants of a variety of other class E vps homologues also had defects in sorting of CPY and Ub–GFP–CPS. Sch. pombe has a mammalian AMSH homologue, sst2. Phenotypic analyses suggested that Sst2p is a class E Vps protein. Taken together, these results suggest that sorting into multivesicular bodies is dependent on class E Vps proteins, including Sst2p, in Sch. pombe

Thermoelectric properties of delafossite-type layered oxides AgIn1–xSnxO2

The thermoelectric properties of delafossite-type layered oxides AgIn1–xSnxO2 that consist of alternating layers of Ag and In1–xSnxO2 were investigated to elucidate their potential as a thermoelectric material. Polycrystalline materials of the AgIn1–xSnxO2 were prepared by a cation exchange reaction between NaIn1–xSnxO2 and AgCl. The solubility limit of the Sn atoms on the In sites was approximately x=0.05. The electrical conductivity and Seebeck coefficient were measured between 373 and 673 K in air. Undoped AgInO2 was an n-type semiconductor with conductivities of 10–4–10–2 –1 cm–1, and the electron carriers were generated via the formation of oxygen vacancies. AgIn0.95Sn0.05O2 was an n-type degenerate semiconductor with conductivities of 100–101 –1 cm–1 where the Sn atoms acted as electron donors. This drastic increase in the electrical conductivity increased the thermoelectric power factor by approximately two orders of magnitude to 10–6–10–5 W m–1 K–2