3 research outputs found
Morphology-Tuned Phase Transitions of Horseshoe Shaped BaTiO<sub>3</sub> Nanomaterials under High Pressure
Exploring new physical
properties of nanomaterials with special
morphology have been important topics in nanoscience and nanotechnology.
Here we report a morphology-tuned structural phase transition under
high pressure in the horseshoe shaped BaTiO<sub>3</sub> nanomaterials
with an average diameter of 26 ± 4 nm. A direct structural phase
transition from the tetragonal to the cubic phase without local rhombohedral
distortion was observed at about 7.7 GPa by in situ high-pressure
X-ray diffraction and Raman spectroscopy, which is clearly different
from the phase transition processes of the BaTiO<sub>3</sub> bulks
and nanoparticles. Additionally, bulk modulus of the tetragonal and
cubic phases were determined to be 125.0 and 211.7 GPa, respectively,
obviously smaller than the estimated values for BaTiO<sub>3</sub> nanoparticles
with the same grain size. Further analysis shows that the unique phase
transition process and the enhanced structural stability of the tetragonal
horseshoe shaped BaTiO<sub>3</sub> nanomaterials, may be attributed
to the similar axes compressibility. Comparing with the high-pressure
study on BaTiO<sub>3</sub> nanoparticles, this study suggests that
the morphology plays an important role in the pressure-induced phase
transition of BaTiO<sub>3</sub> nanomaterials
High-Performance Sn-Based Quasi-Two-Dimensional Perovskite Photodetectors by Altering Dark Current Shunt Pathways
Self-powered
perovskite photodetectors (PDs) have been widely used
in the fields of communications and imaging, but their performance
is still restricted by the high dark current of devices. This study
has shown that the dark current of PDs can be significantly reduced
by adjusting the composition of the dark current shunting paths. We
have fabricated a less toxic high-performance PDs based on two-dimensional
tin-based perovskite BA2FASn2I7.
By controlling the grain size of the perovskite film with potassium
salt of hydroquinone sulfonic acid (KHQSA), we increased the number
of horizontal shunting paths and the dark current was reduced to 1/50th
of its original value. The device shows a high responsivity of 1.4
A W–1, a high detectivity of 8.2 × 1013 Jones, a maximum on/off current ratio of 6.74 × 105, and a rapid rise/decay time of 12.2/14 ms. In addition, as a light
signal receiver in an imaging system, the device can accurately and
sensitively identify light signals under weak light conditions. This
study provides a new way for further improving the performance of
self-powered perovskite PDs by adjusting the composition of horizontal
and vertical dark current shunting paths
Linear Tunability of the Band Gap and Two-Dimensional (2D) to Three-Dimensional (3D) Isostructural Transition in WSe<sub>2</sub> under High Pressure
Transition metal
dichalcogenides (TMDs) have recently gained tremendous interest for
use in electronic and optoelectronic applications. Unfortunately,
the electronic structure or band gap of most TMDs shows noncontinuously
tunable characteristics, which limits their application to energy-variable
optoelectronics. Thus, layered materials with better tunability in
their electronic structures and band gaps are desired. Herein, we
experimentally demonstrated that layered WSe<sub>2</sub> possessed
highly tunable transport properties under various pressures, with
a linearly decreasing band gap that culminates in metallization. Pressure
tuned the band gap of WSe<sub>2</sub> linearly, at a rate of 25 meV/GPa.
The high tunability of WSe<sub>2</sub> was attributed to the larger
electron orbitals of W<sup>2+</sup> and Se<sup>2–</sup> in
WSe<sub>2</sub> compared to the Mo<sup>2+</sup> and S<sup>2–</sup> in MoS<sub>2</sub>. WSe<sub>2</sub> underwent an isostructural phase
transition from a 2D layered structure to a 3D structure at approximately
51.7 GPa, where a conversion from van der Waals (vdW) to covalent-like
bonding was observed in the valence electron localization function
(ELF). Our results present an important advance toward controlling
the band structure of layered materials and suggest significant implications
for energy-variable optoelectronic devices via pressure engineering