4,870 research outputs found

    Strain-driven light polarization switching in deep ultraviolet nitride emitters

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    Residual strain plays a critical role in determining the crystalline quality of nitride epitaxial layers and in modifying their band structure; this often leads to several interesting physical phenomena. It is found, for example, that compressive strain in AlxGa1-xN layers grown on AlyGa1-yN (x<y) templates results in an anti-crossing of the valence bands at considerably much higher Al composition than expected. This happens even in the presence of large and negative crystal field splitting energy for AlxGa1-xN layers. A judicious magnitude of the compressive strain can support vertical light emission (out of the c-plane) from AlxGa1-xN quantum wells up to x\approx 0.80, which is desirable for the development of deep ultraviolet light-emitting diodes designed to operate below 250nm with transverse electric polarization characteristics

    Valley Polarization in Si(100) at Zero Magnetic Field

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    The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO2_2/(100)Si/SiO2_2 quantum well is examined through transport measurements. We demonstrate that the valley splitting can be observed directly as a step in the conductance defining a boundary between valley-unpolarized and polarized regions. This persists to well above liquid helium temperature and shows no dependence on magnetic field, indicating that single-particle valley splitting and valley-polarization exist in (100) silicon even at zero magnetic field.Comment: Accpeted for publication in Phys. Rev. Let

    Resistively-detected NMR lineshapes in a quasi-one dimensional electron system

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    We observe variation in the resistively-detected nuclear magnetic resonance (RDNMR) lineshapes in quantum Hall breakdown. The breakdown is locally occurred in a gate-defined quantum point contact (QPC) region. Of particular interest is the observation of a dispersive lineshape occured when the bulk 2D electron gas (2DEG) is set to νb=2\nu_{\rm{b}} = 2 and the QPC filling factor to the vicinity of νQPC=1\nu_{\rm{QPC}} = 1, strikingly resemble the dispersive lineshape observed on a 2D quantum Hall state. This previously unobserved lineshape in a QPC points to simultaneous occurrence of two hyperfine-mediated spin flip-flop processes within the QPC. Those events give rise to two different sets of nuclei polarized in the opposite direction and positioned at a separate region with different degree of electronic polarizations.Comment: Accepted as a rapid communication in PR
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