Generalized analytic model for rotational and anisotropic metasolids

An analytical approach is presented to model a metasolid accounting for anisotropic effects and rotational mode. The metasolid is made of either cylindrical or spherical hard inclusions embedded in a stiff matrix via soft claddings, and the analytical approach to study the composite material is a generalization of the method introduced by Liu \textit{et al.} [Phys. Rev. B, 71, 014103 (2005)]. It is shown that such a metasolid exhibits negative mass densities near the translational-mode resonances, and negative density of moment of inertia near the rotational resonances. The results obtained by this analytical and continuum approach are compared with those from discrete mass-spring model, and the validity of the later is discussed. Based on derived analytical expressions, we study how different resonance frequencies associated with different modes vary and are placed with respect to each other, in function of the mechanical properties of the coating layer. We demonstrate that the resonances associated with additional modes taken into account, that is, axial translation for cylinders, and rotations for both cylindrical and spherical systems, can occur at lower frequencies compared to the previously studied plane-translational modes.Comment: 30 pages, 10 figure

Evolution of the free volume between rough surfaces in contact

The free volume comprised between rough surfaces in contact governs the fluid/gas transport properties across networks of cracks and the leakage/percolation phenomena in seals. In this study, a fundamental insight into the evolution of the free volume depending on the mean plane separation, on the real contact area and on the applied pressure is gained in reference to fractal surfaces whose contact response is solved using the boundary element method. Particular attention is paid to the effect of the surface fractal dimension and of the surface resolution on the predicted results. The free volume domains corresponding to different threshold levels are found to display fractal spatial distributions whose bounds to their fractal dimensions are theoretically derived. A synthetic formula based on the probability distribution function of the free volumes is proposed to synthetically interpret the numerically observed trends

Crossover between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films

We report transport studies on the 5 nm thick Bi2Se3 topological insulator films which are grown via molecular beam epitaxy technique. The angle-resolved photoemission spectroscopy data show that the Fermi level of the system lies in the bulk conduction band above the Dirac point, suggesting important contribution of bulk states to the transport results. In particular, the crossover from weak antilocalization to weak localization in the bulk states is observed in the parallel magnetic field measurements up to 50 Tesla. The measured magneto-resistance exhibits interesting anisotropy with respect to the orientation of B// and I, signifying intrinsic spin-orbit coupling in the Bi2Se3 films. Our work directly shows the crossover of quantum interference effect in the bulk states from weak antilocalization to weak localization. It presents an important step toward a better understanding of the existing three-dimensional topological insulators and the potential applications of nano-scale topological insulator devices

Observation of the zero Hall plateau in a quantum anomalous Hall insulator

Quantum anomalous Hall (QAH) effect in magnetic topological insulator (TI) is a novel transport phenomenon in which the Hall resistance reaches the quantum plateau in the absence of external magnetic field. Recently, this exotic effect has been discovered experimentally in an ultrathin film of the Bi2Te3 family TI with spontaneous ferromagnetic (FM) order. An important question concerning the QAH state is whether it is simply a zero-magnetic-field version of the quantum Hall (QH) effect, or if there is new physics beyond the conventional paradigm. Here we report experimental investigations on the quantum phase transition between the two opposite Hall plateaus of a QAH insulator caused by magnetization reversal. We observe a well-defined plateau with zero Hall conductivity over a range of magnetic field around coercivity, consistent with a recent theoretical prediction. The features of the zero Hall plateau are shown to be closely related to that of the QAH effect, but its temperature evolution exhibits quantitative differences from the network model for conventional QH plateau transition. We propose that the chiral edge states residing at the magnetic domain boundaries, which are unique to a QAH insulator, are responsible for the zero Hall plateau. The rich magnetic domain dynamics makes the QAH effect a distinctive class of quantum phenomenon that may find novel applications in spintronics.Comment: 4 figures, supplementary information include

Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators

It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to simultaneously tune the chemical potentials of both top and bottom surfaces of a 3D TI thin film. We have realized this in molecular beam epitaxy-grown thin films of 3D TIs, as well as magnetic 3D TIs, by fabricating dual-gate structures on them. The films could be tuned between n-type and p-type by each gate alone. Combined application of two gates can reduce the carrier density of a TI film to a much lower level than with only one of them and enhance the film resistance by 10000 %, implying that Fermi level is tuned very close to the Dirac points of both top and bottom surface states without crossing any bulk band. The result promises applications of 3D TIs in field effect devices.Comment: 19 pages, 4 figures, accepted by Nano Letters, forthcomin