Excitonic absorption in gate controlled graphene quantum dots

We present a theory of excitonic processes in gate controlled graphene quantum dots. The dependence of the energy gap on shape, size and edge for graphene quantum dots with up to a million atoms is predicted. Using a combination of tight-binding, Hartree-Fock and configuration interaction methods, we show that triangular graphene quantum dots with zigzag edges exhibit optical transitions simultaneously in the THz, visible and UV spectral ranges, determined by strong electron-electron and excitonic interactions. The relationship between optical properties and finite magnetic moment and charge density controlled by an external gate is predicted.Comment: ~4 pages, 4 figure

Coulomb effects in semiconductor quantum dots

Coulomb correlations in the optical spectra of semiconductor quantum dots are investigated using a full-diagonalization approach. The resulting multi-exciton spectra are discussed in terms of the symmetry of the involved states. Characteristic features of the spectra like the nearly equidistantly spaced s-shell emission lines and the approximately constant p-shell transition energies are explained using simplified Hamiltonians that are derived taking into account the relative importance of various interaction contributions. Comparisons with previous results in the literature and their interpretation are made.Comment: 7 pages, 2 figure

Quantum strain sensor with a topological insulator HgTe quantum dot

We present a theory of electronic properties of HgTe quantum dot and propose a strain sensor based on a strain-driven transition from a HgTe quantum dot with inverted bandstructure and robust topologically protected quantum edge states to a normal state without edge states in the energy gap. The presence or absence of edge states leads to large on/off ratio of conductivity across the quantum dot, tunable by adjusting the number of conduction channels in the source-drain voltage window. The electronic properties of a HgTe quantum dot as a function of size and applied strain are described using eight-band kp Luttinger and Bir-Pikus Hamiltonians, with surface states identified with chirality of Luttinger spinors and obtained through extensive numerical diagonalization of the Hamiltonian.Comment: 4 figure

An Anderson-Fano Resonance and Shake-Up Processes in the Magneto-Photoluminescence of a Two-Dimensional Electron System

We report an anomalous doublet structure and low-energy satellite in the magneto-photoluminescence spectra of a two-dimensional electron system. The doublet structure moves to higher energy with increasing magnetic field and is most prominent at odd filling factors 5 and 3. The lower-energy satellite peak tunes to lower energy for increasing magnetic field between filling factor 6 and 2. These features occur at energies below the fundamental band of recombination originating from the lowest Landau level and display striking magnetic field and temperature dependence that indicates a many-body origin. Drawing on a recent theoretical description of Hawrylak and Potemski, we show that distinct mechanisms are responsible for each feature.Comment: 14 pages including 5 figures. To appear in the April 15th edition of Phy. Rev. B. rapid com

Quantum circuits based on coded qubits encoded in chirality of electron spin complexes in triple quantum dots

We present a theory of quantum circuits based on logical qubits encoded in chirality of electron spin complexes in lateral gated semiconductor triple quantum dot molecules with one electron spin in each dot. Using microscopic Hamiltonian we show how to initialize, coherently control and measure the quantum state of a chirality based coded qubit using static in-plane magnetic field and voltage tuning of individual dots. The microscopic model of two interacting coded qubits is established and mapped to an Ising Hamiltonian, resulting in conditional two-qubit phase gate

Configuration interaction method for Fock-Darwin states

We present a configuration interaction method optimized for Fock-Darwin states of two-dimensional quantum dots with an axially symmetric, parabolic confinement potential subject to a perpendicular magnetic field. The optimization explicitly accounts for geometrical and dynamical symmetries of the Fock-Darwin single-particle states and for many-particle symmetries associated with the center-of-mass motion and with the total spin. This results in a basis set of reduced size and improved accuracy. The numerical results compare well with the quantum Monte Carlo and stochastic variational methods. The method is illustrated by the evolution of a strongly correlated few-electron droplet in a magnetic field in the regime of the fractional quantum Hall effect.Comment: 17 pages, 3 figures, ReVTeX4, submitted to Solid State Communication

Atomistic theory of electronic and optical properties of InAs/InP self-assembled quantum dots on patterned substrates

We report on a atomistic theory of electronic structure and optical properties of a single InAs quantum dot grown on InP patterned substrate. The spatial positioning of individual dots using InP nano-templates results in a quantum dot embedded in InP pyramid. The strain distribution of a quantum dot in InP pyramid is calculated using the continuum elasticity theory. The electron and valence hole single-particle states are calculated using atomistic effective-bond-orbital model with second nearest-neighbor interactions, coupled to strain via Bir-Pikus Hamiltonian. The optical properties are determined by solving many-exciton Hamiltonian for interacting electron and hole complexes using the configuration-interaction method. The effect of positioning of quantum dots using nanotemplate on their optical spectra is determined by a comparison with dots on unpatterned substrates, and with experimental results. The possibility of tuning the quantum dot properties with varying the nano-template is explored.Comment: 9 pages, 12 figure

Theory of exciton fine structure in semiconductor quantum dots: quantum dot anisotropy and lateral electric field

Theory of exciton fine structure in semiconductor quantum dots and its dependence on quantum dot anisotropy and external lateral electric field is presented. The effective exciton Hamiltonian including long range electron-hole exchange interaction is derived within the k*p effective mass approximation (EMA). The exchange matrix elements of the Hamiltonian are expressed explicitly in terms of electron and hole envelope functions. The matrix element responsible for the "bright" exciton splitting is identified and analyzed. An excitonic fine structure for a model quantum dot with quasi- two-dimensional anisotropic harmonic oscillator (2DLAHO) confining potential is analyzed as a function of the shape anisotropy, size and applied lateral electric field