Non-monotonic temperature dependent transport in graphene grown by Chemical Vapor Deposition

Temperature-dependent resistivity of graphene grown by chemical vapor deposition (CVD) is investigated. We observe in low mobility CVD graphene device a strong insulating behavior at low temperatures and a metallic behavior at high temperatures manifesting a non-monotonic in the temperature dependent resistivity.This feature is strongly affected by carrier density modulation. To understand this anomalous temperature dependence, we introduce thermal activation of charge carriers in electron-hole puddles induced by randomly distributed charged impurities. Observed temperature evolution of resistivity is then understood from the competition among thermal activation of charge carriers, temperature-dependent screening and phonon scattering effects. Our results imply that the transport property of transferred CVD-grown graphene is strongly influenced by the details of the environmentComment: 7 pages, 3 figure

Effect of Inter-Site Repulsions on Magnetic Susceptibility of One-Dimensional Electron Systems at Quarter-Filling

The temperature dependence of the magnetic susceptibility, \chi (T), is investigated for one-dimensional interacting electron systems at quarter-filling within the Kadanoff-Wilson renormalization-group method. The forward scattering on the same branch (the g_4-process) is examined together with the backward (g_1) and forward (g_2) scattering amplitudes on opposite branches. In connection with lattice models, we show that \chi (T) is strongly enhanced by the nearest-neighbor interaction, an enhancement that surpasses one of the next-nearest-neighbor interaction. A connection between our predictions for \chi (T) and experimental results for \chi (T) in quasi-one-dimensional organic conductors is presented.Comment: 4 pages, 4 figures, to be published in Journal of the Physical Society of Japan, vol. 74, No. 1

Formulating the Net Gain of MISO-SFN in the Presence of Self-Interferences

In this study, an analytical formula for multiple-input single-output single frequency network gain (MISO-SFNG) is investigated. To formulate the net MISO-SFNG, we derived the average signal to interference plus noise ratio (SINR) where the gain achieved by the distributed MISO diversity as a function of power imbalance is curve-fitted. Further, we analyzed the losses owing to self-interferences resulting from the delay spread and imperfect channel estimation. We verified the accuracy and effectiveness of the derived formula by comparing the measurement results with the analytical results. The derived formula helps to understand how various system factors affect the gain under a given condition. The formula can be used to evaluate the MISO-SFNG and to predict the MISO-SFN coverage in various system configurations

Finite-Temperature Properties across the Charge Ordering Transition -- Combined Bosonization, Renormalization Group, and Numerical Methods

We theoretically describe the charge ordering (CO) metal-insulator transition based on a quasi-one-dimensional extended Hubbard model, and investigate the finite temperature ($T$) properties across the transition temperature, $T_{\rm CO}$. In order to calculate $T$ dependence of physical quantities such as the spin susceptibility and the electrical resistivity, both above and below $T_{\rm CO}$, a theoretical scheme is developed which combines analytical methods with numerical calculations. We take advantage of the renormalization group equations derived from the effective bosonized Hamiltonian, where Lanczos exact diagonalization data are chosen as initial parameters, while the CO order parameter at finite-$T$ is determined by quantum Monte Carlo simulations. The results show that the spin susceptibility does not show a steep singularity at $T_{\rm CO}$, and it slightly increases compared to the case without CO because of the suppression of the spin velocity. In contrast, the resistivity exhibits a sudden increase at $T_{\rm CO}$, below which a characteristic $T$ dependence is observed. We also compare our results with experiments on molecular conductors as well as transition metal oxides showing CO.Comment: 9 pages, 8 figure