418 research outputs found
Electronic dephasing in wires due to metallic gates
The dephasing effect of metallic gates on electrons moving in one
quasi--one--dimensional diffusive wires is analyzed. The incomplete screening
in this geometry implies that the effect of the gate can be described, at high
energies or temperatures, as an electric field fluctuating in time. The
resulting system can be considered a realization of the Caldeira-Leggett model
of an environment coupled to many particles. Within the range of temperatures
where this approximation is valid, a simple estimation of the inverse dephasing
time gives .Comment: 6 page
Electron heating and mechanical properties of graphene
The heating of electrons in graphene by laser irradiation, and its effects on
the lattice structure, are studied. Values for the temperature of the electron
system in realistic situations are obtained. For sufficiently high electron
temperatures, the occupancy of the states in the band of graphene is
modified. The strength of the carbon-carbon bonds changes, leading to the
emergence of strains, and to buckling in suspended samples. While most
applications of `strain engineering' in two dimensional materials focus on the
effects of strains on electronic properties, the effect studied here leads to
alterations of the structure induced by light. This novel optomechanical
coupling can induce deflections in the order of nm in micron size
samples
Generation and morphing of plasmons in graphene superlattices
Recent experimental studies on graphene on hexagonal Boron Nitride (hBN) have
demonstrated that hBN is not only a passive substrate that ensures superb
electronic properties of graphene's carriers, but that it actively modifies
their massless Dirac fermion character through a periodic moir\'e potential. In
this work we present a theory of the plasmon excitation spectrum of massless
Dirac fermions in a moir\'e superlattice. We demonstrate that graphene-hBN
stacks offer a rich platform for plasmonics in which control of plasmon modes
can occur not only via electrostatic gating but also by adjusting e.g. the
relative crystallographicComment: 10 pages, 12 figures, 3 appendice
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