Ferromagnetic, structurally disordered ZnO implanted with Co ions

We present superparamagnetic clusters of structurally highly disordered Co-Zn-O created by high fluence Co ion implantation into ZnO (0001) single crystals at low temperatures. This secondary phase cannot be detected by common x-ray diffraction but is observed by high-resolution transmission electron microscopy. In contrast to many other secondary phases in a ZnO matrix it induces low-field anomalous Hall effect and thus is a candidate for magneto-electronics applications.Comment: 5 pages, 3 figure

Room temperature ferromagnetism in carbon-implanted ZnO

Unexpected ferromagnetism has been observed in carbon doped ZnO films grown by pulsed laser deposition [Phys. Rev. Lett. 99, 127201 (2007)]. In this letter, we introduce carbon into ZnO films by ion implantation. Room temperature ferromagnetism has been observed. Our analysis demonstrates that (1) C-doped ferromagnetic ZnO can be achieved by an alternative method, i.e. ion implantation, and (2) the chemical involvement of carbon in the ferromagnetism is indirectly proven.Comment: 13 pages, 3 figs, accepted for publication at Appl. Phys. Let

Antimony Implanted in Silicon. A Thin Layer Reference Material for Surface Analysis.

Abstract not availableJRC.D-Institute for Reference Materials and Measurements (Geel

Study of anomalous behaviour of LiTaO 3 during the annealed proton exchange process of optical waveguide's formation -comparison with LiNbO 3

Abstract This paper deals with a detailed study of changes that lithium tantalate (LT) and lithium niobate (LN) single crystals undergo during the annealed proton exchange (APE) process of optical waveguides' formation. It is a well-known fact that several cases of anomalous behaviour are connected to the APE:LT samples, bringing thus an obstruction for the practical utilization of the APE:LT waveguides. As the LT crystal possesses even better optical properties than the LN crystal (e.g., it is less susceptible to optical damage), it is desirable to provide research focused on its behaviour during the APE process in order to acquire a control over the fabrication of the APE:LT devices. Neutron depth profiling (NDP), elastic recoil detection analysis (ERDA) and heavy ion ERDA (HI-ERDA) were performed to study changes in the surface of the LT and LN Z-cut wafers caused by the APE treatment and to determine the concentration depth profiles of the exchanged ions (lithium and hydrogen). Information on modifications of the crystals during the APE was obtained using X-ray diffraction (XRD) analysis. Optical/waveguiding properties of the samples were obtained by means of the standard mode spectroscopy at 633 nm. The experiments proved that the LT is significantly less affected by the APE process compared to the LN and that most characteristics of the APE:LT layers can be easily restored towards that of the virgin crystal by the annealing process

Certification of Antinomy Implanted in Silicon Wafer with a Silicon Dioxide Diffusion Barrier

Abstract not availableJRC.D-Institute for Reference Materials and Measurements (Geel

Contribution of ICP-IDMS to the Certification of Antimony Implanted in a Silicon Wafer - Comparison with RBS and INAA Results.

Abstract not availableJRC.D-Institute for Reference Materials and Measurements (Geel