10 research outputs found
Dielectric Properties of Selected MetalâOrganic Frameworks
The electronic structure of a class
of [Zn<sub>4</sub>OÂ(CO<sub>2</sub>)<sub>6</sub>] based metalâorganic
frameworks (MOFs)
is theoretically analyzed by means of density functional perturbation
theory. The calculated static dielectric constants vary in a range
between 1.33 and 1.54, characterizing the structures as ultralow-<i>k</i> dielectric materials and confirming earlier estimates
qualitatively. We also present the results of first-principle calculations
of the real and imaginary parts of the dielectric function and give
the frequency-dependent dielectric constant up to the near-ultraviolet,
which is important for high frequency semiconductor and optical applications
of MOFs. The dielectric and electronic properties are governed by
the linker molecules, so that the band gap and the dielectric constant
can be engineered
Proton Conduction in a MIL-53(Al) MetalâOrganic Framework: Confinement versus Host/Guest Interaction
In this contribution,
we present and discuss results from a computational study of proton
transfers between imidazole molecules confined in a MIL-53Â(Al) metalâorganic
framework. We combined molecular-dynamics simulations and a density-functional
tight-binding method. The extensive analysis of trajectories resulted
in two main competing effects: on the one hand, the one-dimensional
channel structure of MIL-53Â(Al) arranges the imidazole molecules to
allow proton exchange by hopping transport; on the other hand, the
interactions between the MIL-53Â(Al) host system and the imidazole
molecules influence the free movement retaining the molecules. We
find that the retaining leads to an increase in proton transfers,
when both vehicle mechanisms and hopping events are considered. Thus,
a well-balanced relationship between these two effects is necessary
for efficient proton transport in metalâorganic frameworks.
Furthermore, the lifetime of the transition state could be estimated
to be on the order of 100 fs
Influence of Electric Fields on the Electron Transport in DonorâAcceptor Polymers
The
influence of an electric field on different properties of the
donorâacceptor polymer diketo-pyrrolo-pyrrole bithiophene thienothiophene
(DPPT-TT) that are essential for the charge transport process is studied.
The main focus is on whether the transport in DPPT-TT-based organic
transistors can be tuned by electric fields in the gate direction.
The considered electric fields are in the range 10<sup>8</sup>â10<sup>10</sup> V m<sup>â1</sup>. We show that strong electric fields
(âŒ10<sup>9</sup> V m<sup>â1</sup>) which are parallel
to the polymer backbone can influence the reorganization energy in
a Markus-type approach. Weaker electric fields parallel to the polymer
backbone result in minimal changes to the reorganization energy. The
coupling element of DPPT-TT shows a pronounced affinity to be influenced
by electric fields in the charge transport direction independent of
the field strength
Water Multilayers on TiO<sub>2</sub> (101) Anatase Surface: Assessment of a DFTB-Based Method
A water/(101)
anatase TiO<sub>2</sub> interface has been investigated
with the DFT-based self-consistent-charge density functional tight-binding
theory (SCC-DFTB). By comparison of the computed structural, energetic,
and dynamical properties with standard DFT-GGA and experimental data,
we assess the accuracy of SCC-DFTB for this prototypical solidâliquid
interface. We tested different available SCC-DFTB parameters for Ti-containing
compounds and, accordingly, combined them to improve the reliability
of the method. To better describe water energetics, we have also introduced
a modified hydrogen-bond-damping function (HBD). With this correction,
equilibrium structures and adsorption energies of water on (101) anatase
both for low (0.25 ML) and full (1 ML) coverages are in excellent
agreement with those obtained with a higher level of theory (DFT-GGA).
Furthermore, BornâOppenheimer molecular dynamics (MD) simulations
for mono-, bi-, and trilayers of water on the surface, as computed
with SCC-DFTB, evidence similar ordering and energetics as DFT-GGA
CarâParrinello MD results. Finally, we have evaluated the energy
barrier for the dissociation of a water molecule on the anatase (101)
surface. Overall, the combined set of parameters with the HBD correction
(SCC-DFTB+HBD) is shown to provide a description of the water/water/titania
interface, which is very close to that obtained by standard DFT-GGA,
with a remarkably reduced computational cost. Hence, this study opens
the way to the future investigations on much more extended and realistic
TiO<sub>2</sub>/liquid water systems, which are extremely relevant
for many modern technological applications
Line Defects in Molybdenum Disulfide Layers
Layered
molecular materials and especially MoS<sub>2</sub> are
already accepted as promising candidates for nanoelectronics. In contrast
to the bulk material, the observed electron mobility in single-layer
MoS<sub>2</sub> is unexpectedly low. Here we reveal the occurrence
of intrinsic defects in MoS<sub>2</sub> layers, known as inversion
domains, where the layer changes its direction through a line defect.
The line defects are observed experimentally by atomic resolution
TEM. The structures were modeled and the stability and electronic
properties of the defects were calculated using quantum-mechanical
calculations based on the Density-Functional Tight-Binding method.
The results of these calculations indicate the occurrence of new states
within the band gap of the semiconducting MoS<sub>2</sub>. The most
stable nonstoichiometric defect structures are observed experimentally,
one of which contains metallic MoâMo bonds and another one
bridging S atoms
Line Defects in Molybdenum Disulfide Layers
Layered
molecular materials and especially MoS<sub>2</sub> are
already accepted as promising candidates for nanoelectronics. In contrast
to the bulk material, the observed electron mobility in single-layer
MoS<sub>2</sub> is unexpectedly low. Here we reveal the occurrence
of intrinsic defects in MoS<sub>2</sub> layers, known as inversion
domains, where the layer changes its direction through a line defect.
The line defects are observed experimentally by atomic resolution
TEM. The structures were modeled and the stability and electronic
properties of the defects were calculated using quantum-mechanical
calculations based on the Density-Functional Tight-Binding method.
The results of these calculations indicate the occurrence of new states
within the band gap of the semiconducting MoS<sub>2</sub>. The most
stable nonstoichiometric defect structures are observed experimentally,
one of which contains metallic MoâMo bonds and another one
bridging S atoms
Anisotropic Thermoelectric Response in Two-Dimensional Puckered Structures
Two-dimensional
semiconductor materials with puckered structure
offer a novel playground to implement nanoscale thermoelectric, electronic,
and optoelectronic devices with improved functionality. Using a combination
of approaches to compute the electronic and phonon band structures
with Greenâs function based transport techniques, we address
the thermoelectric performance of phosphorene, arsenene, and SnS monolayers.
In particular, we study the influence of anisotropy in the electronic
and phononic transport properties and its impact on the thermoelectric
figure of merit <i>ZT</i>. Our results show no strong electronic
anisotropy, but a strong thermal one, the effect being most pronounced
in the case of SnS monolayers. This material also displays the largest
figure of merit at room temperature for both transport directions,
zigzag (<i>ZT</i> ⌠0.95) and armchair (<i>ZT</i> ⌠1.6), thus hinting at the high potential of these new materials
in thermoelectric applications
Porous Graphene Oxide/Diboronic Acid Materials: Structure and Hydrogen Sorption
Solvothermal reaction of graphite
oxide (GO) with benzene-1,4-diboronic
acid (DBA) was reported previously to result in formation of graphene
oxide framework (GOF) materials. The theoretical structure of GOFs
consists of graphene layers separated by benzene-diboronic âpillarsâ
with âŒ1 nm slit pores thus providing the opportunity to use
it as a model material to verify the effect of a small pore size on
hydrogen adsorption. A set of samples with specific surface area (SSA)
in the range of âŒ50â1000 m<sup>2</sup>/g were prepared
using variations of synthesis conditions and GO/DBA proportions. Hydrogen
storage properties of GOF samples evaluated at 293 and 77 K were found
to be similar to other nanocarbon trends in relation to SSA values.
Structural characterization of GO/DBA samples showed all typical features
reported as evidence for formation of a framework structure such as
expanded interlayer distance, increased temperature of thermal exfoliation,
typical features in FTIR spectra, etc. However, the samples also exhibited
reversible swelling in polar solvents which is not compatible with
the idealized GOF structure linked by benzene-diboronic molecular
pillars. Therefore, possible alternative nonframework models of structures
with pillars parallel and perpendicular to GO planes are considered
Molybdenum Carbide-Embedded Nitrogen-Doped Porous Carbon Nanosheets as Electrocatalysts for Water Splitting in Alkaline Media
Molybdenum
carbide (Mo<sub>2</sub>C) based catalysts were found
to be one of the most promising electrocatalysts for hydrogen evolution
reaction (HER) in acid media in comparison with Pt-based catalysts
but were seldom investigated in alkaline media, probably due to the
limited active sites, poor conductivity, and high energy barrier for
water dissociation. In this work, Mo<sub>2</sub>C-embedded nitrogen-doped
porous carbon nanosheets (Mo<sub>2</sub>C@2D-NPCs) were successfully
achieved with the help of a convenient interfacial strategy. As a
HER electrocatalyst in alkaline solution, Mo<sub>2</sub>C@2D-NPC exhibited
an extremely low onset potential of âŒ0 mV and a current density
of 10 mA cm<sup>â2</sup> at an overpotential of âŒ45
mV, which is much lower than the values of most reported HER electrocatalysts
and comparable to the noble metal catalyst Pt. In addition, the Tafel
slope and the exchange current density of Mo<sub>2</sub>C@2D-NPC were
46 mV decade<sup>â1</sup> and 1.14 Ă 10<sup>â3</sup> A cm<sup>â2</sup>, respectively, outperforming the state-of-the-art
metal-carbide-based electrocatalysts in alkaline media. Such excellent
HER activity was attributed to the rich Mo<sub>2</sub>C/NPC heterostructures
and synergistic contribution of nitrogen doping, outstanding conductivity
of graphene, and abundant active sites at the heterostructures
Molecular Doping of a High Mobility DiketopyrrolopyrroleâDithienylthieno[3,2â<i>b</i>]thiophene DonorâAcceptor Copolymer with F6TCNNQ
Herein we present a molecular doping
of a high mobility diketopyrrolopyrroleâdithienylthienoÂ[3,2-<i>b</i>]Âthiophene donorâacceptor copolymer polyÂ[3,6-(dithiophene-2-yl)-2,5-diÂ(6-dodecylÂoctadecyl)ÂpyrroloÂ[3,4-<i>c</i>]Âpyrrole-1,4-dione-<i>alt</i>-thienoÂ[3,2-<i>b</i>]Âthiophene], PDPPÂ(6-DO)<sub>2</sub>TT, with the electron-deficient
compound hexafluoroÂtetracyanoÂnaphthoquinoÂdimethane
(F6TCNNQ). Despite a slightly negative HOMO<sub>donor</sub>âLUMO<sub>acceptor</sub> offset of â0.12 eV which may suggest a reduced
driving force for the charge transfer (CT), a partial charge CT was
experimentally observed in PDPPÂ(6-DO)<sub>2</sub>TT:F6TCNNQ by absorption,
vibrational, and electron paramagnetic resonance spectroscopies and
predicted by density functional theory calculations. Despite the modest
CT, PDPPÂ(6-DO)<sub>2</sub>TT:F6TCNNQ films possess unexpectedly high
conductivities up to 2 S/cm (comparable with the conductivities of
the benchmark doped polymer system P3HT:F4TCNQ having a large positive
offset). The observation of the high conductivity in doped PDPPÂ(6-DO)<sub>2</sub>TT films can be explained by a high hole mobility in PDPPÂ(6-DO)<sub>2</sub>TT blends which compensates a lowered (relatively to P3HT:F4TCNQ)
concentration of free charge carriers. We also show that F6TCNNQ-doped
P3HT, the system which has not been reported so far to the best of
our knowledge, exhibits a conductivity up to 7 S/cm, which exceeds
the conductivity of the benchmark P3HT:F4TCNQ system