A Multifunctional Bis-Adduct Fullerene for Efficient Printable Mesoscopic Perovskite Solar Cells

Printable mesoscopic perovskite solar cells (PMPSCs) have exhibited great attractive prospects in the energy conversion field due to their high stability and potential scalability. However, the thick perovskite film in the mesoporous layers challenges the charge transportation and increase grain boundary defects, limiting the performance of the PMPSCs. It is critical not only to improve the electric property of the perovskite film but also to passivate the charge traps to improve the device performance. Herein we synthesized a bis-adduct 2,5-(dimethyl ester) C₆₀ fulleropyrrolidine (bis-DMEC₆₀) via a rational molecular design and incorporated it into the PMPSCs. The enhanced chemical interactions between perovskite and bis-DMEC₆₀ improve the conductivity of the perovskite film as well as elevate the passivation effect of bis-DMEC₆₀ at the grain boundaries. As a result, the fill factor (FF) and power conversion efficiency (PCE) of the PMPSCs containing bis-DMEC₆₀ reached 0.71 and 15.21%, respectively, significantly superior to the analogous monoadduct derivative (DMEC₆₀)-containing and control devices. This work suggests that fullerene derivatives with multifunctional groups are promising for achieving high-performance PMPSCs

Visualizing Carrier Transport in Metal Halide Perovskite Nanoplates via Electric Field Modulated Photoluminescence Imaging

Metal halide perovskite nanostructures have recently been the focus of intense research due to their exceptional optoelectronic properties and potential applications in integrated photonics devices. Charge transport in perovskite nanostructure is a crucial process that defines efficiency of optoelectronic devices but still requires a deep understanding. Herein, we report the study of the charge transport, particularly the drift of minority carrier in both all-inorganic CsPbBr₃ and organic–inorganic hybrid CH₃NH₃PbBr₃ perovskite nanoplates by electric field modulated photoluminescence (PL) imaging. Bias voltage dependent elongated PL emission patterns were observed due to the carrier drift at external electric fields. By fitting the drift length as a function of electric field, we obtained the carrier mobility of about 28 cm² V^–1 S^–1 in the CsPbBr₃ perovskite nanoplate. The result is consistent with the spatially resolved PL dynamics measurement, confirming the feasibility of the method. Furthermore, the electric field modulated PL imaging is successfully applied to the study of temperature-dependent carrier mobility in CsPbBr₃ nanoplates. This work not only offers insights for the mobile carrier in metal halide perovskite nanostructures, which is essential for optimizing device design and performance prediction, but also provides a novel and simple method to investigate charge transport in many other optoelectronic materials

Direct Vapor Growth of Perovskite CsPbBr₃ Nanoplate Electroluminescence Devices

Metal halide perovskite nanostructures hold great promises as nanoscale light sources for integrated photonics due to their excellent optoelectronic properties. However, it remains a great challenge to fabricate halide perovskite nanodevices using traditional lithographic methods because the halide perovskites can be dissolved in polar solvents that are required in the traditional device fabrication process. Herein, we report single CsPbBr₃ nanoplate electroluminescence (EL) devices fabricated by directly growing CsPbBr₃ nanoplates on prepatterned indium tin oxide (ITO) electrodes <i>via</i> a vapor-phase deposition. Bright EL occurs in the region near the negatively biased contact, with a turn-on voltage of ∼3 V, a narrow full width at half-maximum of 22 nm, and an external quantum efficiency of ∼0.2%. Moreover, through scanning photocurrent microscopy and surface electrostatic potential measurements, we found that the formation of ITO/p-type CsPbBr₃ Schottky barriers with highly efficient carrier injection is essential in realizing the EL. The formation of the ITO/p-type CsPbBr₃ Schottky diode is also confirmed by the corresponding transistor characteristics. The achievement of EL nanodevices enabled by directly grown perovskite nanostructures could find applications in on-chip integrated photonics circuits and systems