Spin-polarization and electronic properties of half-metallic Heusler alloys calculated from first-principles

Half-metallic Heusler alloys are amongst the most promising materials for future magnetoelectronic applications. We review some recent results on the electronic properties of these compounds. The origin of the gap in these half-metallic alloys and its connection to the magnetic properties are well understood. Changing the lattice parameter shifts slightly the Fermi level. Spin-orbit coupling induces states within the gap but the alloys keep a very high degree of spin-polarization at the Fermi level. Small degrees of doping and disorder as well as defects with low formation energy have little effect on the properties of the gap, while temperature effects can lead to a quick loss of half-metallicity. Finally we discuss two special issues; the case of quaternary Heusler alloys and the half-metallic ferrimagnets

Engineering the electronic, magnetic and gap-related properties of the quinternary half-metallic Heusler alloys

We review the electronic and magnetic properties of the quinternary full Heusler alloys of the type Co$_2$[Cr$_{1-x}$Mn$_x$][Al$_{1-y}$Si$_y$] employing three different approaches : (i) the coherent potential approximation (CPA), (ii) the virtual crystal approximation (VCA), and (iii) supercell calculations (SC). All three methods give similar results and the local environment manifested itself only for small details of the density of states. All alloys under study are shown to be half-metals and their total spin moments follow the so-called Slater-Pauling behavior of the ideal half-metallic systems. We especially concentrate on the properties related to the minority-spin band-gap. We present the possibility to engineer the properties of these alloys by changing the relative concentrations of the low-valent transition metal and $sp$ atoms in a continuous way. Our results show that for realistic applications, ideal are the compounds rich in Si and Cr since they combine large energy gaps (around 0.6 eV), robust half-metallicity with respect to defects (the Fermi level is located near the middle of the gap) and high values of the majority-spin density of states around the Fermi level which are needed for large values of the perfectly spin-polarized current in spintronic devices like spin-valves or magnetic tunnel junctions.Comment: 17 pages, 10 figure

Multilayers of Zinc-Blende Half-Metals with Semiconductors

We report on first-principles calculations of multilayers of zinc-blende half-metallic ferromagnets CrAs and CrSb with III-V and II-VI semiconductors, in the [001] orientation. We examine the ideal and tetragonalised structures, as well as the case of an intermixed interface. We find that, as a rule, half-metallicity can be conserved throughout the heterostructures, provided that the character of the local coordination and bonding is not disturbed. At the interfaces with semiconductors, we describe a mechanism that can give also a non-integer spin moment per interface transition atom, and derive a simple rule to evaluate it

Ab-initio design of half-metallic fully-compensated ferrimagnets: the case of Cr2_2MnZ (Z= P, As, Sb, Bi) compounds

Electronic structure calculations from first-principles are employed to design some new half-metallic fully-compensated ferrimagnets (or as they are widely known half-metallic antiferromagnets) susceptible of finding applications in spintronics. Cr$_2$MnZ (Z= P, As, Sb, Bi) compounds have 24 valence electrons per unit cell and calculations show that their total spin moment is approximately zero for a wide range of lattice constants in agreement with the Slater-Pauling behavior for ideal half-metals. Simultaneously, the spin magnetic moments of Cr and Mn atoms are antiparallel and the compounds are ferrimagnets. Mean-field approximation is employed to estimate their Curie temperature, which exceeds room temperature for the alloy with Sb. Our findings suggest that Cr$_2$MnSb is the compound of choice for further experimental investigations. Contrary to the alloys mentioned above half-metallic antiferromagnetism is unstable in the case of the Cr$_2$FeZ (Z= Si, Ge, Sn) alloys

Broken-Bond Rule for the Surface Energies of Noble Metals

Using two different full-potential ab-initio techniques we introduce a simple, universal rule based on the number of broken first-neighbor bonds to determine the surface energies of the three noble metals Cu, Ag and Au. When a bond is broken, the rearrangement of the electronic charge for these metals does not lead to a change of the remaining bonds. Thus the energy needed to break a bond is independent of the surface orientation. This novel finding can lead to the development of simple models to describe the energetics of a surface like step and kink formation, crystal growth, alloy formation, equilibrium shape of mesoscopic crystallites and surface faceting.Comment: 4 pages, 2 figure

Influence of mixing the low-valent transition metal atoms (Y,Y∗^*=Cr,Mn,Fe) on the properties of the quaternary Co2_2[Y1−x_{1-x}Yx∗^*_x]Z (Z=Al,Ga,Si,Ge,Sn) Heusler compounds

We complement our study on the doping and disorder in Co$_2$MnZ compounds [I. Galanakis \textit{et al.}, Appl. Phys. Lett. \textbf{89}, 042502 (2006) and K. \"Ozdo\~gan \textit{et al.}, Phys. Rev. B \textbf{74}, (2006)] to cover also the quaterarny Co$_2$[Y$_{1-x}$Y$^*_x$]Z compounds with the lower-valent transition metals Y,Y$^*$ being Cr, Mn or Fe and the sp atom Z being one of Al, Ga, Si, Ge, Sn. This study gives a global overview of the magnetic and electronic properties of these compounds since we vary both Y and Z elements. Our results suggest that for realistic applications the most appropriate compounds are the ones belonging to the families Co$_2$[Mn$_{1-x}$Cr$_x$]Z with $x>0.5$ irrespectively of the nature of the $sp$ atoms since they combine high values of majority DOS at the Fermi level due to the presence of Cr, and half-metallicity with large band-gaps. On the other hand the presence of Fe lowers considerably the majority density of states at the Fermi level and when combined with an element belonging to the Si-column, it even can destroy half-metallicity