Spin-Polarized Electron Transport at Ferromagnet/Semiconductor Schottky Contacts

We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and transport equations at the drift-diffusion level of approximation. Spin-polarized electron current and density in the semiconductor are described for four scenarios corresponding to the injection or the collection of spin polarized electrons at Schottky contacts to n-type or p-type semiconductors. The transport properties of the interface are described by a spin-dependent interface resistance, resulting from an interfacial tunneling region. The spin-dependent interface resistance is crucial for achieving spin injection or spin polarization sensitivity in these configurations. We find that the depletion region resulting from Schottky barrier formation at a metal/semiconductor interface is detrimental to both spin injection and spin detection. However, the depletion region can be tailored using a doping density profile to minimize these deleterious effects. For example, a heavily doped region near the interface, such as a delta-doped layer, can be used to form a sharp potential profile through which electrons tunnel to reduce the effective Schottky energy barrier that determines the magnitude of the depletion region. The model results indicate that efficient spin-injection and spin-polarization detection can be achieved in properly designed structures and can serve as a guide for the structure design.Comment: RevTex

Electron Spin Relaxation in a Semiconductor Quantum Well

A fully microscopic theory of electron spin relaxation by the D'yakonov-Perel' type spin-orbit coupling is developed for a semiconductor quantum well with a magnetic field applied in the growth direction of the well. We derive the Bloch equations for an electron spin in the well and define microscopic expressions for the spin relaxation times. The dependencies of the electron spin relaxation rate on the lowest quantum well subband energy, magnetic field and temperature are analyzed.Comment: Revised version as will appear in Physical Review

Reduction of three-band model for copper oxides to single-band generalized t~-~J model

A three-band model for copper oxides in the region of parameters where the second hole on the copper has energy close to the first hole on the oxygen is considered. The exact solution for one hole on a ferromagnetic background of the ordered copper spins is obtained. A general procedure for transformation of the primary Hamiltonian to the Hamiltonian of singlet and triplet excitations is proposed. Reduction of the singlet-triplet Hamiltonian to the single-band Hamiltonian of the generalized t~-~J model is performed. A comparison of the solution for the generalized t~-~J model on a ferromagnetic background with the exact solution shows a very good agreement.Comment: 20 pages (LATEX

Spin oscillations in transient diffusion of a spin pulse in n-type semiconductor quantum wells

By studying the time and spatial evolution of a pulse of the spin polarization in $n$-type semiconductor quantum wells, we highlight the importance of the off-diagonal spin coherence in spin diffusion and transport. Spin oscillations and spin polarization reverse along the the direction of spin diffusion in the absence of the applied magnetic field are predicted from our investigation.Comment: 5 pages, 4 figures, accepted for publication in PR

Polarized interacting exciton gas in quantum wells and bulk semiconductors

We develop a theory to calculate exciton binding energies of both two- and three-dimensional spin polarized exciton gases within a mean field approach. Our method allows the analysis of recent experiments showing the importance of the polarization and intensity of the excitation light on the exciton luminescence of GaAs quantum wells. We study the breaking of the spin degeneracy observed at high exciton density $(5 \ \ 10^{10} cm ^2)$. Energy level splitting betwen spin +1 and spin -1 is shown to be due to many-body inter-excitonic exchange while the spin relaxation time is controlled by intra-exciton exchange.Comment: Revtex, 4 figures sent by fax upon request by e-mai

Spin relaxation: From 2D to 1D

In inversion asymmetric semiconductors, spin-orbit interactions give rise to very effective relaxation mechanisms of the electron spin. Recent work, based on the dimensionally constrained D'yakonov Perel' mechanism, describes increasing electron-spin relaxation times for two-dimensional conducting layers with decreasing channel width. The slow-down of the spin relaxation can be understood as a precursor of the one-dimensional limit

Theory of Coexistence of Superconductivity and Ferroelectricity : A Dynamical Symmetry Model

We propose and investigate a model for the coexistence of Superconductivity (SC) and Ferroelectricity (FE) based on the dynamical symmetries $su(2)$ for the pseudo-spin SC sector, $h(4)$ for the displaced oscillator FE sector, and $su(2) \otimes h(4)$ for the composite system. We assume a minimal symmetry-allowed coupling, and simplify the hamiltonian using a double mean field approximation (DMFA). A variational coherent state (VCS) trial wave-function is used for the ground state: the energy, and the relevant order parameters for SC and FE are obtained. For positive sign of the SC-FE coupling coefficient, a non-zero value of either order parameter can suppress the other (FE polarization suppresses SC and vice versa). This gives some support to "Matthias' Conjecture" [1964], that SC and FE tend to be mutually exclusive. For such a Ferroelectric Superconductor we predict: a) the SC gap $\Delta$ (and $T_c$) will increase with increasing applied pressure when pressure quenches FE as in many ferroelectrics, and b) the FE polarization will increase with increaesing magnetic field up to $H_c$. The last result is equivalent to the prediction of a new type of Magneto-Electric Effect in a coexistent SC-FE material. Some discussion will be given of the relation of these results to the cuprate superconductors.Comment: 46 page