Many-body exchange-correlation effects in graphene

We calculate, within the leading-order dynamical-screening approximation, the electron self-energy and spectral function at zero temperature for extrinsic (or gated/doped) graphene. We also calculate hot carrier inelastic scattering due to electron-electron interactions in graphene. We obtain the inelastic quasiparticle lifetimes and associated mean free paths from the calculated self-energy. The linear dispersion and chiral property of graphene gives energy dependent lifetimes that are qualitatively different from those of parabolic-band semiconductors.Comment: Submitted on July 8, 2007 to EP2DS-17, Genova, Ital

Scattering mechanisms and Boltzmann transport in graphene

Different scattering mechanisms in graphene are explored and conductivity is calculated within the Boltzmann transport theory. We provide results for short-range scattering using the Random Phase Approximation for electron screening, as well as analytical expressions for the dependence of conductivity on the dielectric constant of the substrate. We further examine the effect of ripples on the transport using a surface roughness model developed for semiconductor heterostructures. We find that close to the Dirac point, \sigma \sim n^\beta, where \beta=1,0,-2 for Coulomb, short-range and surface roughness respectively; implying that Coulomb scattering dominates over both short-range and surface roughness scattering at low density.Comment: To be published in Physica E as EP2DS-17 conference proceeding

Effect of charged impurity correlation on transport in monolayer and bilayer graphene

We study both monolayer and bilayer graphene transport properties taking into account the presence of correlations in the spatial distribution of charged impurities. In particular we find that the experimentally observed sublinear scaling of the graphene conductivity can be naturally explained as arising from impurity correlation effects in the Coulomb disorder, with no need to assume the presence of short-range scattering centers in addition to charged impurities. We find that also in bilayer graphene correlations among impurities induce a crossover of the scaling of the conductivity at higher carrier densities. We show that in the presence of correlation among charged impurities the conductivity depends nonlinearly on the impurity density $n_i$ and can even increase with $n_i$.Comment: 11 pages, 10 figures. arXiv admin note: text overlap with arXiv:1104.066

Analysis of the resistance in p-SiGe over a wide temperature range

The temperature dependence of a system exhibiting a `metal-insulator transition in two dimensions at zero magnetic field' (MIT) is studied up to 90K. Using a classical scattering model we are able to simulate the non-monotonic temperature dependence of the resistivity in the metallic high density regime. We show that the temperature dependence arises from a complex interplay of metallic and insulating contributions contained in the calculation of the scattering rate 1/\td(E,T), each dominating in a limited temperature range.Comment: 4 pages with 5 figure

Interface charged impurity scattering in semiconductor MOSFETs and MODFETs: temperature dependent resistivity and 2D "metallic" behavior

We present the results on the anomalous 2D transport behavior by employing Drude-Boltzmann transport theory and taking into account the realistic charge impurity scattering effects. Our results show quantitative agreement with the existing experimental data in several different systems and address the origin of the strong and non-monotonic temperature dependent resistivity.Comment: Presented at SIMD, Dec. 1999 in Hawaii. To be published in Superlattices and Microstructures, May 2000 issu

Temperature dependent resistivity of spin-split subbands in GaAs 2D hole system

We calculate the temperature dependent resistivity in spin-split subbands induced by the inversion asymmetry of the confining potential in GaAs 2D hole systems. By considering both temperature dependent multisubband screening of impurity disorder and hole-hole scattering we find that the strength of the metallic behavior depends on the symmetry of the confining potential (i.e., spin-splitting) over a large range of hole density. At low density above the metal-insulator transition we find that effective disorder reduces the enhancement of the metallic behavior induced by spin-splitting. Our theory is in good qualitative agreement with existing experiments

Transverse optical Josephson plasmons, equations of motion

A detailed calculation is presented of the dielectric function in superconducttors consisting of two Josephson coupled superconducting layers per unit cell, taking into account the effect of finite compressibility of the electron fluid. From the model it follows, that two longitudinal, and one transverse optical Josephson plasma resonance exist in these materials, for electric field polarization perpendicular to the planes. The latter mode appears as a resonance in the transverse dielectric function, and it couples directly to the electrical field vector of infrared radiation. A shift of all plasma frequencies, and a reduction of the intensity of the transverse optical Josephson plasmon is shown to result from the finite compressibility of the electron fluid.Comment: 17 pages, ReVTeX, 7 figures in eps forma

Plasmon-pole approximation for semiconductor quantum wire electrons

We develop the plasmon-pole approximation for an interacting electron gas confined in a semiconductor quantum wire. We argue that the plasmon-pole approximation becomes a more accurate approach in quantum wire systems than in higher dimensional systems because of severe phase-space restrictions on particle-hole excitations in one dimension. As examples, we use the plasmon-pole approximation to calculate the electron self-energy due to the Coulomb interaction and the hot-electron energy relaxation rate due to LO-phonon emission in GaAs quantum wires. We find that the plasmon-pole approximation works extremely well as compared with more complete many-body calculations.Comment: 16 pages, RevTex, figures included. Also available at http://www-cmg.physics.umd.edu/~lzheng

Metallicity and its low temperature behavior in dilute 2D carrier systems

We theoretically consider the temperature and density dependent transport properties of semiconductor-based 2D carrier systems within the RPA-Boltzmann transport theory, taking into account realistic screened charged impurity scattering in the semiconductor. We derive a leading behavior in the transport property, which is exact in the strict 2D approximation and provides a zeroth order explanation for the strength of metallicity in various 2D carrier systems. By carefully comparing the calculated full nonlinear temperature dependence of electronic resistivity at low temperatures with the corresponding asymptotic analytic form obtained in the $T/T_F \to 0$ limit, both within the RPA screened charged impurity scattering theory, we critically discuss the applicability of the linear temperature dependent correction to the low temperature resistivity in 2D semiconductor structures. We find quite generally that for charged ionized impurity scattering screened by the electronic dielectric function (within RPA or its suitable generalizations including local field corrections), the resistivity obeys the asymptotic linear form only in the extreme low temperature limit of $T/T_F \le 0.05$. We point out the experimental implications of our findings and discuss in the context of the screening theory the relative strengths of metallicity in different 2D systems.Comment: We have substantially revised this paper by adding new materials and figures including a detailed comparison to a recent experimen

Intrasubband and Intersubband Electron Relaxation in Semiconductor Quantum Wire Structures

We calculate the intersubband and intrasubband many-body inelastic Coulomb scattering rates due to electron-electron interaction in two-subband semiconductor quantum wire structures. We analyze our relaxation rates in terms of contributions from inter- and intrasubband charge-density excitations separately. We show that the intersubband (intrasubband) charge-density excitations are primarily responsible for intersubband (intrasubband) inelastic scattering. We identify the contributions to the inelastic scattering rate coming from the emission of the single-particle and the collective excitations individually. We obtain the lifetime of hot electrons injected in each subband as a function of the total charge density in the wire.Comment: Submitted to PRB. 20 pages, Latex file, and 7 postscript files with Figure