Information flow and regulation of foraging activity in bumble bees (Bombus spp.)

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Superconductivity in charge Kondo systems

We present a theory of superconductivity in charge Kondo systems, materials with resonant quantum valence fluctuations, in the regime where the transition temperature is comparable to the charge Kondo resonance. We find superconductivity induced by charge Kondo impurities, study how pairing of a superconducting host is enhanced due to charge Kondo centers and investigate the interplay between Kondo-scattering and inter-impurity Josephson coupling. We discuss the implications of our theory for Tl-doped PbTe, which has recently been identified as a candidate charge Kondo system.Comment: 4 pages, 4 figures; revised version; detailed discussion on the physics of Tl-doped PbTe adde

Quantum criticality between topological and band insulators in (3+1)(3+1)-dimensions

Four-component massive and massless Dirac fermions in the presence of long range Coulomb interaction and chemical potential disorder exhibit striking fermionic quantum criticality. For an odd number of flavors of Dirac fermions, the sign of the Dirac mass distinguishes the topological and the trivial band insulator phases, and the gapless semi-metallic phase corresponds to the quantum critical point that separates the two. Up to a critical strength of disorder, the semi-metallic phase remains stable, and the universality class of the direct phase transition between two insulating phases is unchanged. Beyond the critical strength of disorder the semi-metallic phase undergoes a phase transition into a disorder controlled diffusive metallic phase, and there is no longer a direct phase transition between the two types of insulating phases. Our results are also applicable to even number of flavors of Dirac fermions, and the band inversion transition in various non-topological narrow gap semiconductors.Comment: 16 pages, 14 figures; replaced with the version accepted by PR

Solving simultaneously Dirac and Ricatti equations

We analyse the behaviour of the Dirac equation in $d=1+1$ with Lorentz scalar potential. As the system is known to provide a physical realization of supersymmetric quantum mechanics, we take advantage of the factorization method in order to enlarge the restricted class of solvable problems. To be precise, it suffices to integrate a Ricatti equation to construct one-parameter families of solvable potentials. To illustrate the procedure in a simple but relevant context, we resort to a model which has proved useful in showing the phenomenon of fermion number fractionalization

Topological Insulators with Inversion Symmetry

Topological insulators are materials with a bulk excitation gap generated by the spin orbit interaction, and which are different from conventional insulators. This distinction is characterized by Z_2 topological invariants, which characterize the groundstate. In two dimensions there is a single Z_2 invariant which distinguishes the ordinary insulator from the quantum spin Hall phase. In three dimensions there are four Z_2 invariants, which distinguish the ordinary insulator from "weak" and "strong" topological insulators. These phases are characterized by the presence of gapless surface (or edge) states. In the 2D quantum spin Hall phase and the 3D strong topological insulator these states are robust and are insensitive to weak disorder and interactions. In this paper we show that the presence of inversion symmetry greatly simplifies the problem of evaluating the Z_2 invariants. We show that the invariants can be determined from the knowledge of the parity of the occupied Bloch wavefunctions at the time reversal invariant points in the Brillouin zone. Using this approach, we predict a number of specific materials are strong topological insulators, including the semiconducting alloy Bi_{1-x} Sb_x as well as \alpha-Sn and HgTe under uniaxial strain. This paper also includes an expanded discussion of our formulation of the topological insulators in both two and three dimensions, as well as implications for experiments.Comment: 16 pages, 7 figures; published versio

Topological Insulators

Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator, but have protected conducting states on their edge or surface. The 2D topological insulator is a quantum spin Hall insulator, which is a close cousin of the integer quantum Hall state. A 3D topological insulator supports novel spin polarized 2D Dirac fermions on its surface. In this Colloquium article we will review the theoretical foundation for these electronic states and describe recent experiments in which their signatures have been observed. We will describe transport experiments on HgCdTe quantum wells that demonstrate the existence of the edge states predicted for the quantum spin Hall insulator. We will then discuss experiments on Bi_{1-x}Sb_x, Bi_2 Se_3, Bi_2 Te_3 and Sb_2 Te_3 that establish these materials as 3D topological insulators and directly probe the topology of their surface states. We will then describe exotic states that can occur at the surface of a 3D topological insulator due to an induced energy gap. A magnetic gap leads to a novel quantum Hall state that gives rise to a topological magnetoelectric effect. A superconducting energy gap leads to a state that supports Majorana fermions, and may provide a new venue for realizing proposals for topological quantum computation. We will close by discussing prospects for observing these exotic states, a well as other potential device applications of topological insulators.Comment: 23 pages, 20 figures, Published versio

Coherent State for a Relativistic Spinless Particle

The Klein-Gordon equation with scalar potential is considered. In the Feshbach-Villars representation the annihilation operator for a linear potential is defined and its eigenstates are obtained. Although the energy levels in this case are not equally-spaced, depending on the eigenvalues of the annihilation operator, the states are nearly coherent and squeezed. The relativistic Poschl-Teller potential is introduced. It is shown that its energy levels are equally-spaced. The coherence of time evolution of the eigenstates of the annihilation operator for this potential is evaluated.Comment: 12 pages, 11 figures, to appear in Phys. lett.

Band-Gap Nonlinearity in Lead Chalcogenide (PbQ, Q = Te, Se, S) Alloys

Narrow band-gap lead chalcogenides have been developed for several optical and electronic applications. However, band-gap energies of the ternary and quaternary alloys have received little attention compared with the parent binary phases. Here, we have fabricated single-phase ternary (PbTe)1−x(PbSe)x and quaternary (PbTe)0.9−y(PbSe)0.1(PbS)y and (PbTe)0.65−z(PbSe)0.35(PbS)z alloys and shown that although lattice parameters follow Vegard’s law as a function of composition, the bandgap energies exhibit a substantial bowing effect. The ternary (PbTe)1−x(PbSe)x system features a smaller bowing parameter predominantly due to the difference in electronegativity between Se and Te, whereas the larger bowing parameters in quaternary alloys are generated from a larger crystal lattice mismatch and larger miscibility gap. These findings can lead to further advances in tuning the band-gap and lattice parameters for optical and electronic applications of lead chalcogenides