Flexible Copper-Based Thermistors Fabricated by Laser Direct Writing for Low-Temperature Sensing

With the flexibilization tendency of traditional electronics, developing sensing devices for the low-temperature field is demanding. Here, we fabricated a flexible copper-based thermistor by a laser direct writing process with Cu ion precursors. The copper-based thermistor performs with excellent temperature sensing ability and high stability under different environments. We discussed the effect of laser power on the temperature sensitivity of the copper-based thermistor, explained the sensing mechanism of the as-written copper-based films, and fabricated a temperature sensor array for realizing temperature management in a specific zone. All of the investigations have demonstrated that such copper-based thermistors can be used as candidate devices for low-temperature sensing fields

Flexible Copper-Based Thermistors Fabricated by Laser Direct Writing for Low-Temperature Sensing

With the flexibilization tendency of traditional electronics, developing sensing devices for the low-temperature field is demanding. Here, we fabricated a flexible copper-based thermistor by a laser direct writing process with Cu ion precursors. The copper-based thermistor performs with excellent temperature sensing ability and high stability under different environments. We discussed the effect of laser power on the temperature sensitivity of the copper-based thermistor, explained the sensing mechanism of the as-written copper-based films, and fabricated a temperature sensor array for realizing temperature management in a specific zone. All of the investigations have demonstrated that such copper-based thermistors can be used as candidate devices for low-temperature sensing fields

Flexible Copper-Based Thermistors Fabricated by Laser Direct Writing for Low-Temperature Sensing

With the flexibilization tendency of traditional electronics, developing sensing devices for the low-temperature field is demanding. Here, we fabricated a flexible copper-based thermistor by a laser direct writing process with Cu ion precursors. The copper-based thermistor performs with excellent temperature sensing ability and high stability under different environments. We discussed the effect of laser power on the temperature sensitivity of the copper-based thermistor, explained the sensing mechanism of the as-written copper-based films, and fabricated a temperature sensor array for realizing temperature management in a specific zone. All of the investigations have demonstrated that such copper-based thermistors can be used as candidate devices for low-temperature sensing fields

High-Performance Mid-IR to Deep-UV van der Waals Photodetectors Capable of Local Spectroscopy at Room Temperature

The ability to perform broadband optical spectroscopy with sub-diffraction-limit resolution is highly sought-after for a wide range of critical applications. However, sophisticated tip-enhanced techniques are currently required to achieve this goal. We bypass this challenge by demonstrating an extremely broadband photodetector based on a two-dimensional (2D) van der Waals heterostructure that is sensitive to light across over a decade in energy from the mid-infrared (MIR) to deep-ultraviolet (DUV) at room temperature. The devices feature high detectivity (> 10^9 cm Hz^1/2 W^-1) together with high bandwidth (2.1 MHz). The active area can be further miniaturized to submicron dimensions, far below the diffraction limit for the longest detectable wavelength of 4.1 um, enabling such devices for facile measurements of local optical properties on atomic-layer-thickness samples placed in close proximity. This work can lead to the development of low-cost and high-throughput photosensors for hyperspectral imaging at the nanoscale

Flexible Copper-Based Thermistors Fabricated by Laser Direct Writing for Low-Temperature Sensing

With the flexibilization tendency of traditional electronics, developing sensing devices for the low-temperature field is demanding. Here, we fabricated a flexible copper-based thermistor by a laser direct writing process with Cu ion precursors. The copper-based thermistor performs with excellent temperature sensing ability and high stability under different environments. We discussed the effect of laser power on the temperature sensitivity of the copper-based thermistor, explained the sensing mechanism of the as-written copper-based films, and fabricated a temperature sensor array for realizing temperature management in a specific zone. All of the investigations have demonstrated that such copper-based thermistors can be used as candidate devices for low-temperature sensing fields

Nonvolatile Reconfigurable Logic Device Based on Photoinduced Interfacial Charge Trapping in van der Waals Gap

Due to the increasing complexity in miniaturization of electronic devices, reconfigurable field-effect transistors (RFETs) have emerged as a solution. Although the foundational concepts of RFETs have matured over two decades, ongoing breakthroughs are needed to address challenges such as improving the device performance as well as achieving balanced symmetry between n-type and p-type transport modes with long-term stability. Herein, we present a nonvolatile WSe2-based RFET that utilizes photoassisted interfacial charge trapping at the h-BN and SiO2 interface. Unlike typical RFETs with two gate electrodes, our RFETs achieved polarity control with a single operating gate activated exclusively under white-light exposure. The threshold voltage was tunable, ranging from 27.4 (−31.6 V) to 0.9 (+19.5 V), allowing selective activation of n-type (p-type) operation at VGS = 0 V. Additionally, our WSe2-based RFETs show superior repeatability and long-term stability. Leveraging these advantages, various reconfigurable logic circuits were successfully demonstrated, including complementary inverters and switch circuits as well as pull-up and pull-down circuits, highlighting the potential of WSe2 FETs for future advancements of integrated circuits

Flexible Copper-Based Thermistors Fabricated by Laser Direct Writing for Low-Temperature Sensing

With the flexibilization tendency of traditional electronics, developing sensing devices for the low-temperature field is demanding. Here, we fabricated a flexible copper-based thermistor by a laser direct writing process with Cu ion precursors. The copper-based thermistor performs with excellent temperature sensing ability and high stability under different environments. We discussed the effect of laser power on the temperature sensitivity of the copper-based thermistor, explained the sensing mechanism of the as-written copper-based films, and fabricated a temperature sensor array for realizing temperature management in a specific zone. All of the investigations have demonstrated that such copper-based thermistors can be used as candidate devices for low-temperature sensing fields

Femtosecond Laser Irradiation-Mediated MoS₂–Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors

2D materials exhibit intriguing electrical and optical properties, making them promising candidates for next-generation nanoelectronic devices. However, the high contact resistance of 2D materials to electrode material often limits the ultimate performance and potential of 2D materials and devices. In this work, we demonstrate a localized femtosecond (fs) laser irradiation process to substantially minimize the resistance of MoS2–metal contacts. A reduction of the contact resistance exceeding three orders of magnitude is achieved for mechanically exfoliated MoS2, which remarkably improves the overall FET performance. The underlying mechanisms of resistance reduction are the removal of organic contamination induced by the transfer process, as well as the lowering of Schottky barrier resistance (RSB) attributed to interface Fermi level pinning (FLP) by Au diffusion, and the lowering of interlayer resistance (Rint) due to interlayer coupling enhancement by Au intercalation under fs laser irradiation. By taking advantage of the improved MoS2–metal contact behavior, a high-performance MoS2 photodetector was developed with a photoresponsivity of 68.8 A W–1 at quite a low Vds of 0.5 V, which is ∼80 times higher than the pristine multilayer photodetector. This contamination-free, site-specific, and universal photonic fabrication technique provides an effective tool for the integration of complex 2D devices, and the mechanism of MoS2–metal interface modification reveals a new pathway to engineer the 2D material–metal interface