Davydov Splitting and Excitonic Resonance Effects in Raman Spectra of Few-Layer MoSe₂

Raman spectra of few-layer MoSe₂ were measured with eight excitation energies. New peaks that appear only near resonance with various exciton states are analyzed, and the modes are assigned. The resonance profiles of the Raman peaks reflect the joint density of states for optical transitions, but the symmetry of the exciton wave functions leads to selective enhancement of the A_1g mode at the A exciton energy and the shear mode at the C exciton energy. We also find Davydov splitting of <i>intra</i>layer A_1g, E_1g, and A_2u modes due to <i>inter</i>layer interaction for some excitation energies near resonances. Furthermore, by fitting the spectral positions of <i>inter</i>layer shear and breathing modes and Davydov splitting of <i>intra</i>layer modes to a linear chain model, we extract the strength of the <i>inter</i>layer interaction. We find that the second-nearest-neighbor interlayer interaction amounts to about 30% of the nearest-neighbor interaction for both in-plane and out-of-plane vibrations

Polarization-Independent Light Emission Enhancement of ZnO/Ag Nanograting via Surface Plasmon Polariton Excitation and Cavity Resonance

In this study, we observed that the photoluminescence (PL) intensity of ZnO/Ag nanogratings was significantly enhanced compared with that of a planar counterpart under illumination of both transverse magnetic (TM) and transverse electric (TE)-mode light. In the TM mode, angle-resolved reflectance spectra exhibited dispersive dips, indicating cavity resonance as well as grating-coupled surface plasmon polariton (SPP) excitation. In the TE mode, cavity resonance only was allowed, and broad dips appeared in the reflectance spectra. Strong optical field confinement in the ZnO layers, with the help of SPP and cavity modes, facilitated polarization-insensitive PL enhancement. Optical simulation results were in good agreement with the experimental results, supporting the suggested scenario

Growth and Device Characteristics of CZTSSe Thin-Film Solar Cells with 8.03% Efficiency

The improvement of the efficiency of Cu₂ZnSn­(S,Se)₄ (CZTSSe)-based solar cells requires the formation of high-grain-sized pure CZTSSe throughout the film. We have successfully selenized precursor samples of Cu/SnS/ZnS/Mo/Soda lime glass in an almost sealed selenium furnace. Owing to the presence of confined and high-pressure Se vapor in the furnace, Se easily diffused into the precursor samples, and high-quality Se-rich CZTSSe absorbers were obtained. To understand the effect of the growth mechanism in our precursor and annealing system, this study examines the phase evolution and grain formation. Device parameters are discussed from the perspective of a material microstructure in order to improve performance. At a selenization temperature of 570 °C, a CZTSSe film showed fully developed grains with a size of around 2 μm without noticeable pore development near the Mo back contact. Solar cells with up to 8.03% efficiency were obtained with a layer thickness of about 1.2 μm. Detailed electrical analysis of the device indicated that the performance of the device is mainly associated with shunt resistance