Using Optical Anisotropy as a Quality Factor To Rapidly Characterize Structural Qualities of Large-Area Graphene Films

In this study, we find that the optical anisotropy of graphene films could be used as an alternative quality factor for the rapid characterization of large-area graphene films prepared through chemical vapor deposition. We develop an angle-variable spectroscopic method to rapidly determine the optical anisotropy of graphene films. Unlike approaches using Raman scattering spectroscopy, this optical anisotropy method allows ready characterization of the structural quality of large-area graphene samples without the application of high-intensity laser irradiation or complicated optical setups. Measurements of optical anisotropy also allow us to distinguish graphene samples with different extents of structural imperfections; the results are consistent with those obtained from using Raman scattering spectroscopy. In addition, we also study the properties of graphene-based transparent conductive films at wide incident angles because of the advantage of the optical anisotropic properties of graphene. The transmittance of graphene is much higher than that of indium tin oxide films, especially at large incident angles

Graphene-to-Substrate Energy Transfer through Out-of-Plane Longitudinal Acoustic Phonons

Practically, graphene is often deposited on substrates. Given the major substrate-induced modification of properties and considerable energy transfer at the interface, the graphene–substrate interaction has been widely discussed. However, the proposed mechanisms were restricted to the two-dimensional (2D) plane and interface, while the energy conduction in the third dimension is hardly considered. Herein, we disclose the transfer of energy perpendicular to the interface of the combined system of the 2D graphene and the 3D base. More precisely, our observation of the energy dissipation of optically excited graphene via emitting out-of-plane longitudinal acoustic phonon into the substrate is presented. By applying nanoultrasonic spectroscopy with a piezoelectric nanolayer embedded in the substrate, we found that under photoexcitation by a femtosecond laser pulse graphene can emit longitudinal coherent acoustic phonons (CAPs) with frequencies over 1 THz into the substrate. In addition, the waveform of the CAP pulse infers that the photocarriers and sudden lattice heating in graphene caused modification of graphene–substrate bond and consequently generated longitudinal acoustic phonons in the substrate. The direct observation of this unexplored graphene-to-substrate vertical energy transfer channel can bring new insights into the understanding of the energy dissipation and limited transport properties of supported graphene

Nondestructive Characterization of the Structural Quality and Thickness of Large-Area Graphene on Various Substrates

We demonstrate an inspection technique, based on only one ellipsometric parameter, Ψ, of spectroscopic ellipsometry (SE), for the rapid, simultaneous identification of both the structural quality and thicknesses of large-area graphene films. The measured Ψ spectra are strongly affected by changes in the out-of-plane absorption coefficients (α_TM); they are also correlated to the ratio of the intensities of the D and G bands in Raman spectra of graphene films. In addition, the electronic transition state of graphene within the UV regime assists the characterization of the structural quality. We also demonstrated that the intensities and shifts of the signals in Ψ spectra allow clear identification of the structural qualities and thicknesses, respectively, of graphene films. Moreover, this Ψ-based method can be further applied to graphene films coated on various substrates. In addition, mapping of the values of Ψ is a very convenient and useful means of rapidly characterizing both the structural quality and thickness of 2D materials at local areas. Therefore, this Ψ-based characterization method has great potential for application in the mass production of devices based on large-area graphene

Band Gap Engineering of Chemical Vapor Deposited Graphene by <i>in Situ</i> BN Doping

Band gap opening and engineering is one of the high priority goals in the development of graphene electronics. Here, we report on the opening and scaling of band gap in BN doped graphene (BNG) films grown by low-pressure chemical vapor deposition method. High resolution transmission electron microscopy is employed to resolve the graphene and h-BN domain formation in great detail. X-ray photoelectron, micro-Raman, and UV–vis spectroscopy studies revealed a distinct structural and phase evolution in BNG films at low BN concentration. Synchrotron radiation based XAS-XES measurements concluded a gap opening in BNG films, which is also confirmed by field effect transistor measurements. For the first time, a significant band gap as high as 600 meV is observed for low BN concentrations and is attributed to the opening of the π–π* band gap of graphene due to isoelectronic BN doping. As-grown films exhibit structural evolution from homogeneously dispersed small BN clusters to large sized BN domains with embedded diminutive graphene domains. The evolution is described in terms of competitive growth among h-BN and graphene domains with increasing BN concentration. The present results pave way for the development of band gap engineered BN doped graphene-based devices