Nonperturbative model for optical response under intense periodic fields with application to graphene in a strong perpendicular magnetic field

Graphene exhibits extremely strong optical nonlinearity when a strong perpendicular magnetic field is applied, the response current shows strong field dependence even for moderate light intensity, and the perturbation theory fails. We nonperturbatively calculate full optical conductivities induced by a periodic field in an equation-of-motion framework based on the Floquet theorem, with the scattering described phenomenologically. The nonlinear response at high fields is understood in terms of the dressed electronic states, or Floquet states, which is further characterized by the optical conductivity for a weak probe light field. This approach is illustrated for a magnetic field at $5$ T and a driving field with photon energy $0.05$ eV. Our results show that the perturbation theory works only for weak fields $<3$ kV/cm, confirming the extremely strong light matter interaction for Landau levels of graphene. This approach can be easily extended to the calculation of optical conductivities in other systems

Nonlinear magneto-optic effects in doped graphene and gapped graphene: a perturbative treatment

The nonlinear magneto-optic responses are investigated for gapped graphene and doped graphene in a perpendicular magnetic field. The electronic states are described by Landau levels, and the electron dynamics in an optical field is obtained by solving the density matrix in the equation of motion. In the linear dispersion approximation around the Dirac points, both linear conductivity and third order nonlinear conductivities are numerically evaluated for infrared frequencies. The nonlinear phenomena, including third harmonic generation, Kerr effects and two photon absorption, and four wave mixing, are studied. All optical conductivities show strong dependence on the magnetic field. At weak magnetic fields, our results for doped graphene agree with those in the literature. We also present the spectra of the conductivities of gapped graphene. At strong magnetic fields, the third order conductivities show peaks with varying the magnetic field and the photon energy. These peaks are induced by the resonant transitions between different Landau levels. The resonant channels, the positions, and the divergences of peaks are analyzed. The conductivities can be greatly modified, up to orders of magnitude. The dependence of the conductivities on the gap parameter and the chemical potential is studied.Comment: 18 pages, 8 figure

Numerical study of the optical nonlinearity of doped and gapped graphene: From weak to strong field excitation

Numerically solving the semiconductor Bloch equations within a phenomenological relaxation time approximation, we extract both the linear and nonlinear optical conductivities of doped graphene and gapped graphene under excitation by a laser pulse. We discuss in detail the dependence of second harmonic generation, third harmonic generation, and the Kerr effects on the doping level, the gap, and the electric field amplitude. The numerical results for weak electric fields agree with those calculated from available analytic perturbation formulas. For strong electric fields when saturation effects are important, all the effective third order nonlinear response coefficients show a strong field dependence.Comment: 12 pages with 9 figure

Spin relaxation under identical Dresselhaus and Rashba coupling strengths in GaAs quantum wells

Spin relaxation under identical Dresselhaus and Rashba coupling strengths in GaAs quantum wells is studied in both the traditional collinear statistics, where the energy spectra do not contain the spin-orbit coupling terms, and the helix statistics, where the spin-orbit couplings are included in the energy spectra. We show that there is only marginal difference between the spin relaxation times obtained from these two different statistics. We further show that with the cubic term of the Dresselhaus spin-orbit coupling included, the spin relaxation time along the (1,1,0) direction becomes finite, although it is still much longer than that along the other two perpendicular directions. The properties of the spin relaxation along this special direction under varies conditions are studied in detail.Comment: 9 pages, 4 figures. J. Appl. Phys. 99, 2006 (in press

Third order nonlinearity of graphene: effects of phenomenological relaxation and finite temperature

We investigate the effect of phenomenological relaxation parameters on the third order optical nonlinearity of doped graphene by perturbatively solving the semiconductor Bloch equation around the Dirac points. An analytic expression for the nonlinear conductivity at zero temperature is obtained under the linear dispersion approximation. With this analytic formula as starting point, we construct the conductivity at finite temperature and study the optical response to a laser pulse of finite duration. We illustrate the dependence of several nonlinear optical effects, such as third harmonic generation, Kerr effects and two photon absorption, parametric frequency conversion, and two color coherent current injection, on the relaxation parameters, temperature, and pulse duration. In the special case where one of the electric fields is taken as a dc field, we investigate the dc-current and dc-field induced second order nonlinearities, including dc-current induced second harmonic generation and difference frequency generation.Comment: 23+ pages, 10 figures. In this version we correct a sign typo in Eq. (25), for which we thank the discussion in the work http://arxiv.org/abs/1506.00534v

Theory of optical spin orientation in silicon

We theoretically investigate the indirect optical injection of carriers and spins in bulk silicon, using an empirical pseudopotential description of electron states and an adiabatic bond charge model for phonon states. We identify the selection rules, the contribution to the carrier and spin injection in each conduction band valley from each phonon branch and each valence band, and the temperature dependence of these processes. The transition from the heavy hole band to the lowest conduction band dominates the injection due to the large joint density of states. For incident light propagating along the $[00\bar{1}]$ direction, the injection rates and the degree of spin polarization of injected electrons show strong valley anisotropy. The maximum degree of spin polarization is at the injection edge with values 25% at low temperature and 15% at high temperature.Comment: 16 pages, 19 figures. This is an extended and comprehensive versio

Two-photon Indirect Optical Injection and Two-color Coherent Control in Bulk Silicon

Using an empirical pseudopotential description of electron states and an adiabatic bond charge model for phonon states in bulk silicon, we theoretically investigate two-photon indirect optical injection of carriers and spins and two-color coherent control of the motion of the injected carriers and spins. For two-photon indirect carrier and spin injection, we identify the selection rules of band edge transitions, the injection in each conduction band valley, and the injection from each phonon branch at 4 K and 300 K. At 4 K, the TA phonon-assisted transitions dominate the injection at low photon energies, and the TO phonon-assisted at high photon energies. At 300 K, the former dominates at all photon energies of interest. The carrier injection shows anisotropy and linear-circular dichroism with respect to light propagation direction. For light propagating along the direction, the carrier injection exhibits valley anisotropy, and the injection into the $Z$ conduction band valley is larger than that into the $X/Y$ valleys. For $\sigma^-$ light propagating along the ($$) direction, the degree of spin polarization gives a maximum value about 20% (6%) at 4 K and -10% (20%) at 300 K, and at both temperature shows abundant structure near the injection edges due to contributions from different phonon branches. Forthe two-color coherent current injection with an incident optical field composed of a fundamental frequency and its second harmonic, the response tensors of the electron (hole) charge and spin currents are calculated at 4 K and 300 K. We show the current control for three different polarization scenarios. The spectral dependence of the maximum swarm velocity shows that the direction of charge current reverses under increase in photon energy.Comment: 15 pages and 14 figure

The Radio and Gamma-Ray Luminosities of Blazars

Based on the $\gamma$-ray data of blazars in the third EGRET catalog and radio data at 5 GHz, we studied the correlation between the radio and $\gamma$-ray luminosities using two statistical methods. The first method was the partial correlation analysis method, which indicates that there exist correlations between the radio and $\gamma$-ray luminosities in both high and low states as well as in the average case. The second method involved a comparison of expected $\gamma$-ray luminosity distribution with the observed data using the Kolmogorov-- Smirnov (KS) test. In the second method, we assumed that there is a correlation between the radio and $\gamma$-ray luminosities and that the $\gamma$-ray luminosity function is proportional to the radio luminosity function. The KS test indicates that the expected gamma-ray luminosity distributions are consistent with the observed data in a reasonable parameter range. Finally, we used different $\gamma$-ray luminosity functions to estimate the possible 'observed' $\gamma$-ray luminosity distributions by GLAST.Comment: 8 pages, 4 figures, one table, PASJ, 53 (2001