3D sensors for the HL-LHC

In order to increase its discovery potential, the Large Hadron Collider (LHC) accelerator will be upgraded in the next decade. The high luminosity LHC (HL-LHC) period demands new sensor technologies to cope with increasing radiation fluences and particle rates. The ATLAS experiment will replace the entire inner tracking detector with a completely new silicon-only system. 3D pixel sensors are promising candidates for the innermost layers of the Pixel detector due to their excellent radiation hardness at low operation voltages and low power dissipation at moderate temperatures. Recent developments of 3D sensors for the HL-LHC are presented.Comment: 8 pages, 5 figures, International Workshops on Radiation Imaging Detectors 201

Inverse Low Gain Avalanche Detectors (iLGADs) for precise tracking and timing applications

Low Gain Avalanche Detector (LGAD) is the baseline sensing technology of the recently proposed Minimum Ionizing Particle (MIP) end-cap timing detectors (MTD) at the Atlas and CMS experiments. The current MTD sensor is designed as a multi-pad matrix detector delivering a poor position resolution, due to the relatively large pad area, around 1 $mm^2$; and a good timing resolution, around 20-30 ps. Besides, in his current technological incarnation, the timing resolution of the MTD LGAD sensors is severely degraded once the MIP particle hits the inter-pad region since the signal amplification is missing for this region. This limitation is named as the LGAD fill-factor problem. To overcome the fill factor problem and the poor position resolution of the MTD LGAD sensors, a p-in-p LGAD (iLGAD) was introduced. Contrary to the conventional LGAD, the iLGAD has a non-segmented deep p-well (the multiplication layer). Therefore, iLGADs should ideally present a constant gain value over all the sensitive region of the device without gain drops between the signal collecting electrodes; in other words, iLGADs should have a 100${\%}$ fill-factor by design. In this paper, tracking and timing performance of the first iLGAD prototypes is presented.Comment: Conference Proceedings of VCI2019, 15th Vienna Conference of Instrumentation, February 18-22, 2019, Vienna, Austri

Recent Technological Developments on LGAD and iLGAD Detectors for Tracking and Timing Applications

This paper reports the last technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n++-p+-p structure, where the doping profile of the p+ layer is optimized to achieve high field and high impact ionization at the junction. The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work.Comment: Keywords: silicon detectors, avalanche multiplication, timing detectors, tracking detectors. 8 pages. 8 Figure

Radiation Hardness of Thin Low Gain Avalanche Detectors

Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 um). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5e15 cm-2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (~300 um) and offer larger charge collection with respect to detectors without gain layer for fluences <2e15 cm-2. Larger initial gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors

Gain and time resolution of 45 μ\mum thin Low Gain Avalanche Detectors before and after irradiation up to a fluence of 101510^{15} neq_{eq}/cm2^2

Low Gain Avalanche Detectors (LGADs) are silicon sensors with a built-in charge multiplication layer providing a gain of typically 10 to 50. Due to the combination of high signal-to-noise ratio and short rise time, thin LGADs provide good time resolutions. LGADs with an active thickness of about 45 $\mu$m were produced at CNM Barcelona. Their gains and time resolutions were studied in beam tests for two different multiplication layer implantation doses, as well as before and after irradiation with neutrons up to $10^{15}$ n$_{eq}$/cm$^2$. The gain showed the expected decrease at a fixed voltage for a lower initial implantation dose, as well as for a higher fluence due to effective acceptor removal in the multiplication layer. Time resolutions below 30 ps were obtained at the highest applied voltages for both implantation doses before irradiation. Also after an intermediate fluence of $3\times10^{14}$ n$_{eq}$/cm$^2$, similar values were measured since a higher applicable reverse bias voltage could recover most of the pre-irradiation gain. At $10^{15}$ n$_{eq}$/cm$^2$, the time resolution at the maximum applicable voltage of 620 V during the beam test was measured to be 57 ps since the voltage stability was not good enough to compensate for the gain layer loss. The time resolutions were found to follow approximately a universal function of gain for all implantation doses and fluences.Comment: 17 page

Recent technological developments on LGAD and iLGAD detectors for tracking and timing applications

Proceeding of the 10th International “Hiroshima” Symposium on the Development and Application of Semiconductor Tracking Detectors.-- et al.This paper reports the latest technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n–p–p structure, where the doping profile of the p layer is optimized to achieve high field and high impact ionization at the junction. The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work.This work was developed in the framework of the CERN RD50 collaboration and financed by the Spanish Ministry of Economy and Competitiveness through the Particle Physics National Program (FPA2013-48308-C2-2-P, FPA2014-55295-C3-2-R and FPA2013-48387-C6-1-P). This project has received funding from the European Union's Horizon 2020 Research and Innovation program under Grant Agreement no. 654168 (AIDA-2020).Open Access funded by CERN.Peer Reviewe

Beyond Traditional Metrics: Assessing Value in Carpal Tunnel Surgeries

Beyond Traditional Metrics: Assessing Value in Carpal Tunnel Surgeries Meet Patel1, Emily Mazier2, Megan Carulla1, Trae Hill1, Alex Lindahl2, Charles S. Day3 1Wayne State University, Detroit, MI, 2Oakland University William Beaumont, Auburn Hills, MI, 3Henry Ford Medical System, Detroit, MI Introduction: To control healthcare costs, one must consider cost-effectiveness and quality of care metrics. This study compares the value of carpal tunnel release (CTR) performed in the ambulatory surgical center (ASC) to the hospital outpatient department (HOPD). Methods: Costs were determined by the Time-Driven Activity-Based Costing (TDABC) methodology. All steps of a patient care pathway for CTR performed in ASC and HOPD were organized into a process map. Costs were categorized into the following: Direct Variable: Staff salaries directly involved in patient care Direct Fixed: Materials, supplies, and building fees Indirect: Maintenance, administration, and marketing Differences in pre-operative and 3-month post-operative PROMIS UE and PI scores were multiplied by average life-years remaining for each patient to determine quality-adjusted life-years (QALY). Costs were divided by QALYUE and QALYPI to determine incremental cost-effectiveness ratios (ICER), denoted as ICERUE and ICERPI. Results 16 HOPD patients were compared to 18 ASC patients. Costs were significantly lower in the ASC by $951.15, or 30.5$6097/QALY. ICERPI was greater in the HOPD by $3325.69/QALY. Discussion: Higher ICER values indicate the HOPD provides less value, despite having better outcomes compared to the ASC. The significant decrease in cost shows the ASC to be more cost-effective. Significance/Clinical relevance: As healthcare costs continue to rise, value-based care will maintain a pivotal role. Combining TDABC and PROs to determine value can aid clinicians in decision-making