Continuous Formation of Vibronic Ground State RbCs Molecules via Photoassociation

We demonstrate the direct formation of vibronic ground state RbCs molecules by photoassociation of ultracold atoms followed by radiative stabilization. The photoassociation proceeds through deeply-bound levels of the (2)^{3}\Pi_{0^{+}} state. From analysis of the relevant free-to-bound and bound-to-bound Franck-Condon factors, we have predicted and experimentally verified a set of photoassociation resonances that lead to efficient creation of molecules in the v=0 vibrational level of the X^{1}\Sigma^{+} electronic ground state. We also compare the observed and calculated laser intensity required to saturate the photoassociation rate. We discuss the prospects for using short-range photoassociation to create and accumulate samples of ultracold polar molecules in their rovibronic ground state.Comment: 15 pages, 7 figure

Method for Determination of Technical Noise Contributions to Ion Motional Heating

Microfabricated Paul ion traps show tremendous promise for large-scale quantum information processing. However, motional heating of ions can have a detrimental effect on the fidelity of quantum logic operations in miniaturized, scalable designs. In many experiments, contributions to ion heating due to technical voltage noise present on the static (DC) and radio frequency (RF) electrodes can be overlooked. We present a reliable method for determining the extent to which motional heating is dominated by residual voltage noise on the DC or RF electrodes. Also, we demonstrate that stray DC electric fields can shift the ion position such that technical noise on the RF electrode can significantly contribute to the motional heating rate. After minimizing the pseudopotential gradient experienced by the ion induced by stray DC electric fields, the motional heating due to RF technical noise can be significantly reduced.Comment: 8 pages, 4 figure

Ion traps fabricated in a CMOS foundry

We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This is the first demonstration of scalable quantum computing hardware, in any modality, utilizing a commercial CMOS process, and it opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.Comment: 4 pages, 3 figure

Ablation loading of barium ions into a surface electrode trap

Trapped-ion quantum information processing may benefit from qubits encoded in isotopes that are practically available in only small quantities, e.g. due to low natural abundance or radioactivity. Laser ablation provides a method of controllably liberating neutral atoms or ions from low-volume targets, but energetic ablation products can be difficult to confine in the small ion-electrode distance, micron-scale, microfabricated traps amenable to high-speed, high-fidelity manipulation of ion arrays. Here we investigate ablation-based ion loading into surface-electrode traps of different sizes to test a model describing ion loading probability as a function of effective trap volume and other trap parameters. We demonstrate loading of ablated and photoionized barium in two cryogenic surface-electrode traps with 730 $\mu$m and 50 $\mu$m ion-electrode distances. Our loading success probability agrees with a predictive analytical model, providing insight for the confinement of limited-quantity species of interest for quantum computing, simulation, and sensing