54 research outputs found

    Derivatives of Entropy Rate in Special Families of Hidden Markov Chains

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    Consider a hidden Markov chain obtained as the observation process of an ordinary Markov chain corrupted by noise. Zuk, et. al. [13], [14] showed how, in principle, one can explicitly compute the derivatives of the entropy rate of at extreme values of the noise. Namely, they showed that the derivatives of standard upper approximations to the entropy rate actually stabilize at an explicit finite time. We generalize this result to a natural class of hidden Markov chains called ``Black Holes.'' We also discuss in depth special cases of binary Markov chains observed in binary symmetric noise, and give an abstract formula for the first derivative in terms of a measure on the simplex due to Blackwell.Comment: The relaxed condtions for entropy rate and examples are taken out (to be part of another paper). The section about general principle and an example to determine the domain of analyticity is taken out (to be part of another paper). A section about binary Markov chains corrupted by binary symmetric noise is adde

    Collagen scaffold remodeling by human mesenchymal stem cells

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    DMM 2011 entitled: Re-engineering Regenerative MedicinePoster Session - Tissue Engineering: no. 82Type I collagen has been widely used as scaffold for tissue engineering because of its excellent biocompatibility and negligible immunogenicity. We previously have developed a collagen microencapsulation technology entrapping many cells including human mesenchymal stem cells (hMSCs) in microspheres made of nanofibrous collagen meshwork. Nevertheless, little is understood about how stem cells interact with and remodel the collagen meshwork. This study aims to investigate collagen remodeling by human mesenchymal stem cells (hMSCs) in terms of degradation, new matrix synthesis, and re‐organization. We …postprin

    Cellular mechanisms involved in intermittent hypoxia-induced heart damage in rat

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    Poster PresentationBACKGROUND: Obstructive sleep apnoea (OSA), characterised by intermittent hypoxia (IH) during sleep, is increasingly recognised as an independent risk factor of cardiovascular diseases (CVD). OSA has been reported to be associated with changes in the levels of circulating oxidative stress and inflammatory markers as well as dyslipidemia, supporting their mediating roles in cardiovascular pathogenesis. This study aimed to investigate the ...published_or_final_versionThe 17th Medical Research Conference, Department of Medicine, The University of Hong Kong, Hong Kong, 14 January 2012. In Hong Kong Medical Journal, 2012, v. 18 n. 1, suppl. 1, p. 23, abstract no. 2

    Role of heme oxygenase-1 in intermittent hypoxia-induced inflammation and oxidative stress in eAhy 926 endothelial cell line

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    published_or_final_versionThe 16th Medical Research Conference (MRC), Department of Medicine, The University of Hong Kong, Hong Kong, China, 22 January 2011. In Hong Kong Medical Journal, 2011, v. 17 n. 1, suppl. 1, p. 29, abstract no. 4

    Modification of serum adiponectin and CINC-1 levels by intermittent hypoxia and/or hyperlipidemia in vivo

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    published_or_final_versionThe 15th Medical Research Conference, Department of Medicine, The University of Hong Kong, Hong Kong, 16 January 2010. In Hong Kong Medical Journal, 2010, v. 16, suppl. 1, p. 22, abstract no. 2

    Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with HfTiO as gate dielectric

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    Pentacene organic thin-film transistor (OTFT) with high-K HffiO gate dielectric has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have been studied. After treating the dielectric in the plasma, the carrier mobility of the transistor can be improved by about 5 times to 0.0883 cm2/V•s. Moreover, the fluorine plasma treatment can shift the threshold voltage of the device in the positive direction. Experimental results also show that NH3 annealing can enhance the OTFT performance in terms of higher mobility, smaller sub-threshold slope and larger on/off ratio.published_or_final_versio

    High-Performance Pentacene Thin-Film Transistor With High-κ HfLaON as Gate Dielectric

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    Effects of fluorine plasma and ammonia annealing on pentacene thin -film transistor with ZrLaOx as gate dielectric

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    Pentacene organic thin-film transistor (OTFT) based on ZrLaOx gate dielectric is proposed and has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have been studied. It reveals that the plasma treatment can greatly improve carrier mobility and shift the threshold voltage in the positive direction. With a threshold voltage less than 0.5 V, the OTFT can work at very low supply voltage. On the other hand, the ensuing ammonia annealing counteracts the plasma treatment and shifts the threshold voltage in the opposite direction. © 2012 IEEE.published_or_final_versio

    蛍光性核酸類縁体の合成と応用:DNA-タンパク質複合体の構造及びメタルセンシングに関する研究

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    京都大学0048新制・課程博士博士(理学)甲第21599号理博第4506号新制||理||1647(附属図書館)京都大学大学院理学研究科化学専攻(主査)教授 杉山 弘, 教授 秋山 芳展, 准教授 竹田 一旗学位規則第4条第1項該当Doctor of ScienceKyoto UniversityDGA
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