Supplementary document for Holographic imaging of antiferromagnetic domains with in-situ magnetic field - 6825646.pdf

Supplementary informatio

Quantitative Method to Determine Planar Defect Frequency in InAs Nanowires by High Resolution X‑ray Diffraction

The ongoing study of {111} planar defects (PDs) in III–V nanowires (NWs) entails a fast and quantitative characterization method beyond transmission electron microscopy (TEM). We report here a simple and reliable method to calculate the PD frequency in InAs NWs using a lab X-ray diffractometer. The fact that the PD distribution is location independent and irrelevant to the NWs diameter in catalyst-free InAs NWs epitaxy makes PD frequency global calculation possible. We demonstrated that the PDs follow a geometric distribution in NWs. As a consequence, applying a 1D disordered layers diffraction model, we relate the diffraction peak angle directly to the PD frequency. The calculated PD frequency values are in good agreement with that extracted from high resolution TEM analysis. As an example, we applied this method to study the influence of growth temperature on PD frequencies in the frame of a 2D nucleation model