Reduction of Annealing Times for Energy Conservation in Aluminum

Carnegie Mellon University was teamed with the Alcoa Technical Center with support from the US Dept. of Energy (Office of Industrial Technology) and the Pennsylvania Technology Investment Authority (PTIA) to make processing of aluminum less costly and more energy efficient. Researchers in the Department of Materials Science and Engineering have investigated how annealing processes in the early stages of aluminum processing affect the structure and properties of the material. Annealing at high temperatures consumes significant amounts of time and energy. By making detailed measurements of the crystallography and morphology of internal structural changes they have generated new information that will provide a scientific basis for shortening processing times and consuming less energy during annealing

Chemical interaction at the buried silicon/zinc oxide thin-film solar cell interface as revealed by hard x-ray photoelectron spectroscopy

Hard X-ray photoelectron spectroscopy (HAXPES) is used to identify chemical interactions (such as elemental redistribution) at the buried silicon /aluminum-doped zinc oxide thin-film solar cell interface. Expanding our study of the interfacial oxidation of silicon upon its solid-phase crystallization (SPC), in which we found zinc oxide to be the source of oxygen, in this investigation we address chemical interaction processes involving zinc and aluminum. In particular, we observe an increase of zinc- and aluminum-related HAXPES signals after SPC of the deposited amorphous silicon thin films. Quantitative analysis suggests an elemental redistribution in the proximity of the silicon/aluminum-doped zinc oxide interface – more pronounced for aluminum than for zinc – as explanation. Based on these insights the complex chemical interface structure is discussed

An acoustic charge transport imager for high definition television applications

In this report we present the progress during the second six month period of the project. This includes both experimental and theoretical work on the acoustic charge transport (ACT) portion of the chip, the theoretical program modelling of both the avalanche photodiode (APD) and the charge transfer and overflow transistor and the materials growth and fabrication part of the program

Sunmaster: An SEP cargo vehicle for Mars missions

Options are examined for an unmanned solar powered electric propulsion cargo vehicle for Mars missions. The 6 prime areas of study include: trajectory, propulsion system, power system, supporting structure, control system, and launch consideration. Optimization of the low thrust trajectory resulted in a total round trip mission time just under 4 years. The argon propelled electrostatic ion thruster system consists of seventeen 5 N engines and uses a specific impulse of 10,300 secs. At Earth, the system uses 13 engines to produce 60 N of thrust; at Mars, five engines are used, producing 25 N thrust. The thrust of the craft is varied between 60 N at Earth and 24 N at Mars due to reduced solar power available. Solar power is collected by a Fresnel lens concentrator system using a multistacked cell. This system provides 3.5 MW to the propulsion system after losses. Control and positioning to the craft are provided by a system of three double gimballed control moment gyros. Four shuttle 'C' launches will be used to transport the unassembled vehicle in modular units to low Earth orbit where it will be assembled using the Mobile Transporter of the Space Station Freedom

Destruction of massive fragments in protostellar disks and crystalline silicate production

We present a mechanism for the crystalline silicate production associated with the formation and subsequent destruction of massive fragments in young protostellar disks. The fragments form in the embedded phase of star formation via disk fragmentation at radial distances \ga 50-100 AU and anneal small amorphous grains in their interior when the gas temperature exceeds the crystallization threshold of ~ 800 K. We demonstrate that fragments that form in the early embedded phase can be destroyed before they either form solid cores or vaporize dust grains, thus releasing the processed crystalline dust into various radial distances from sub-AU to hundred-AU scales. Two possible mechanisms for the destruction of fragments are the tidal disruption and photoevaporation as fragments migrate radially inward and approach the central star and also dispersal by tidal torques exerted by spiral arms. As a result, most of the crystalline dust concentrates to the disk inner regions and spiral arms, which are the likely sites of fragment destruction.Comment: Accepted by the Astrophysical Journal Letter

A Study on the Effects of C060 Gamma-radiation on Steam-grown Sio2 MOS Structures

Cobalt 60 gamma radiation effects on Metal Oxide Semiconductors /MOS/ with p-type and n-type silicon substrate

Material properties of high mobility TCOs and application to solar cells

The benefit of achieving high electron mobilities in transparent conducting oxides TCOs is twofold they first exhibit superior optical properties, especially in the NIR spectral range, and secondly their low resistivity enables the usage of thinner films. Remarkably high mobilities can be obtained in Al doped zinc oxide by post deposition annealing under a protective layer. The procedure has not only shown to increase mobility, but also strongly reduces sub bandgap absorption. Extensive optical, electrical and structural characterization is carried out in the films in order to clarify the microscopic origins of the changes in material properties. While the annealing of defect states, most likely deep acceptors, seems clear, earlier results also suggest some influence of grain boundaries. Tailing, on the contrary, seems to be linked to extended defects. In application to a Si H c Si H thin film solar cells the films have already shown to increase spectral response. When reducing the film thickness, the main challenge is to provide a suitable light trapping scheme. Normally this is achieved by a wet chemical etching step in diluted HCl, which provides a surface structure with suitable light scattering properties. Therefore a TCO independent light scattering approach using textures glass was applied in conjunction with the high mobility zinc oxide. The substrate enables the use of very thin TCO layers with a strongly reduced parasitic absorptio

Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation growth is suppressed by rapid formation of the graphene buffer layer which stabilizes the SiC surface. The enhanced nucleation is enforced by decomposition of polymer adsorbates which act as a carbon source. With most of the steps well below 0.75 nm pure monolayer graphene without bilayer inclusions is formed with lateral dimensions only limited by the size of the substrate. This makes the polymer assisted sublimation growth technique the most promising method for commercial wafer scale epitaxial graphene fabrication. The extraordinary electronic quality is evidenced by quantum resistance metrology at 4.2 K with until now unreached precision and high electron mobilities on mm scale devices.Comment: 20 pages, 6 Figure

Review on X-ray detectors based on scintillators and CMOS technology

This article describes the theoretical basis, design and implementation of X-ray microdetectors based on scintillating materials and CMOS technology. The working principle of such microdetectors consists in the absorption of X-rays by scintillators, which produce visible light. The visible light is then detected and converted into electric signals by means of photodetectors. In order to understand such detectors, several issues related to its implementation are presented in this article, namely: Production of X-rays and interaction between them and matter - the first step necessary to the detection of X-rays is that they must be absorbed by some material, in this case by a scintillator; Radiation detectors - there are several types of detectors, namely: pn junctions, photoconductors, based on thermal effects and scintillators; Fabrication of scintillator arrays - after the X-ray radiation is absorbed by a scintillator, this material emits visible light whose intensity is proportional to the total energy of the absorbed X-rays; Optical interfaces between scintillators and photodetectors - the visible light generated by scintillators must arrive to the photodetectors, so, it is necessary to have an interface between the scintillators and the photodetectors that ideally does not introduce losses; Photodetectors and interface electronics - the visible light is absorbed by the photodetectors and converted into electrical signals, which are finally converted into digital images by means of interface electronics. The article presents some promising patents on X-ray detectors based on scintillators and CMOS technology.Fundação para a Ciência e a Tecnologia (FCT) - Bolsa SFRH/BSAB/1014/201