70,719 research outputs found

    Random Deposition Model with a Constant Capture Length

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    We introduce a sequential model for the deposition and aggregation of particles in the submonolayer regime. Once a particle has been randomly deposited on the substrate, it sticks to the closest atom or island within a distance \ell, otherwise it sticks to the deposition site. We study this model both numerically and analytically in one dimension. A clear comprehension of its statistical properties is provided, thanks to capture equations and to the analysis of the island-island distance distribution.Comment: 14 pages, minor corrections. Accepted for publication in Progress of Theoretical Physic

    Fluctuations and scaling in models for particle aggregation

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    We consider two sequential models of deposition and aggregation for particles. The first model (No Diffusion) simulates surface diffusion through a deterministic capture area, while the second (Sequential Diffusion) allows the atoms to diffuse up to \ell steps. Therefore the second model incorporates more fluctuations than the first, but still less than usual (Full Diffusion) models of deposition and diffusion on a crystal surface. We study the time dependence of the average densities of atoms and islands and the island size distribution. The Sequential Diffusion model displays a nontrivial steady-state regime where the island density increases and the island size distribution obeys scaling, much in the same way as the standard Full Diffusion model for epitaxial growth. Our results also allow to gain insight into the role of different types of fluctuations.Comment: 25 pages. Minor changes in the main text and in some figures. Accepted for publication in Surface Scienc

    The effect of monomer evaporation on a simple model of submonolayer growth

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    We present a model for thin film growth by particle deposition that takes into account the possible evaporation of the particles deposited on the surface. Our model focuses on the formation of two-dimensional structures. We find that the presence of evaporation can dramatically affect the growth kinetics of the film, and can give rise to regimes characterized by different ``growth'' exponents and island size distributions. Our results are obtained by extensive computer simulations as well as through a simple scaling approach and the analysis of rate equations describing the system. We carefully discuss the relationship of our model with previous studies by Venables and Stoyanov of the same physical situation, and we show that our analysis is more general.Comment: 41 pages including figures, Revtex, to be published in Physical Review

    Growth of three-dimensional structures by atomic deposition on surfaces containing defects : simulations and theory

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    We perform a comprehensive study of the formation of three dimensional (pyramidal) structures in a large range of conditions, including the possible evaporation of adatoms from the surface and the presence of surface defects. We compare our computer simulations to theoretical calculations of the growth and find good agreement between them. This work clarifies precedent studies of three dimensional growth and predicts the island size distributions obtained in the different regimes. Finally, we show how our analysis can be used to interpret experimental data.Comment: 15 pages, Revtex. submitted to Surface Scienc
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