Low-cost interference lithography

The authors report demonstration of a low-cost ( ∼ 1000 USD) interference lithography system based on a Lloyd’s mirror interferometer that is capable of ∼ 300 nm pitch patterning. The components include only a 405 nm GaN diode-laser module, a machinist’s block, a chrome-coated silicon mirror, substrate, and double-sided carbon scanning electron microscopy (SEM) tape. The laser and the machinist’s block were assembled in a linear configuration, and to complete the system, the mirror and substrate were taped to perpendicular surfaces of the machinist’s block. Approximately 50 silicon substrates were prepared, exposed, and developed, after which some were inspected in a SEM. The associated laser spectrum was also measured, enabling calculation of the laser’s fringe visibility as it varied along the substrate surface. To compare the exposed resist pattern to the fringe visibility, the authors measured the first order diffraction efficiency as a function of position along the grating surface. Their measurements indicated that artifacts seen in both the optical spectrum and resulting grating patterns arose from the laser diode source, thus improving the source characteristics will be the topic of future work.Singapore-MIT Alliance for Research and Technolog

Fabrication of high quality sub-micron Au gratings over large areas with pulsed laser interference lithography for SPR sensors

Metallic gratings were fabricated using high energy laser interference lithography with a frequency tripled Nd:YAG nanosecond laser. The grating structures were first recorded in a photosensitive layer and afterwards transferred to an Au film. High quality Au gratings with a period of 770 nm and peak-to-valley heights of 20-60 nm exhibiting plasmonic resonance response were successfully designed, fabricated and characterized.Comment: 10 pages, 7 figure

Optical lithography

Optical lithography is a photon-based technique comprised of projecting an image into a photosensitive emulsion (photoresist) coated onto a substrate such as a silicon wafer. It is the most widely used lithography process in the high volume manufacturing of nano-electronics by the semiconductor industry. Optical lithography’s ubiquitous use is a direct result of its highly parallel nature allowing vast amounts of information to be transferred very rapidly. For example, a modern leading edge lithography tool produces 150-300-mm patterned wafers per hour with 40-nm two-dimensional pattern resolution, yielding a pixel throughput of approximately 1.8T pixels/s. Continual advances in optical lithography capabilities have enabled the computing revolution over the past 50 years

Antireflection silicon structures with hydrophobic property fabricated by three-beam laser interference

This paper demonstrates antireflective structures on silicon wafer surfaces with hydrophobic property fabricated by three-beam laser interference. In this work, a three-beam laser interference system was set up to generate periodic micro-nano hole structures with hexagonal distributions. Compared with the existing technologies, the array of hexagonally-distributed hole structures fabricated by three-beam laser interference reveals a design guideline to achieve considerably low solar-weighted reflectance (SWR) in the wavelength range of 300-780 nm. The resulting periodic hexagonally-distributed hole structures have shown extremely low SWR (1.86%) and relatively large contact angle (140°) providing with a self-cleaning capability on the solar cell surface

Bimodal waveguide interferometer RI sensor fabricated on low-cost polymer platform

A refractive index sensor based on bimodal waveguide interferometer is demonstrated on the low-cost polymer platform for the first time. Different from conventional interferometers which make use of the interference between the light from two arms, bimodal waveguide interferometers utilize the interference between the two different internal modes in the waveguide. Since the utilized first higher mode has a wide evanescent tail which interacts with the external environment, the interferometer can reach a high sensitivity. Instead of vertical bimodal structure which is normally employed, the lateral bimodal waveguide is adopted in order to simplify the fabrication process. A unique offset between the centers of single mode waveguide and bimodal waveguide is designed to excite the two different modes with equal power which contributes to the maximum fringe visibility. The bimodal waveguide interferometer is finally fabricated on optical polymer (Ormocore) which is transparent at both infrared and visible wavelengths. It is fabricated using the UV-based soft imprint technique which is simple and reproductive. The bulk sensitivity of fabricated interferometer sensor with a 5 mm sensing length is characterized using different mass concentration sodium chloride solutions. The sensitivity is obtained as 316 pi rad/RIU and the extinction ratio can reach 18 dB

Determination of beam incidence conditions based on the analysis of laser interference patterns

Beam incidence conditions in the formation of two-, three- and four-beam laser interference patterns are presented and studied in this paper. In a laser interference lithography (LIL) process, it is of importance to determine and control beam incidence conditions based on the analysis of laser interference patterns for system calibration as any slight change of incident angles or intensities of beams will introduce significant variations of periods and contrasts of interference patterns. In this work, interference patterns were captured by a He-Ne laser interference system under different incidence conditions, the pattern period measurement was achieved by cross-correlation with, and the pattern contrast was calculated by image processing. Subsequently, the incident angles and intensities of beams were determined based on the analysis of spatial distributions of interfering beams. As a consequence, the relationship between the beam incidence conditions and interference patterns is revealed. The proposed method is useful for the calibration of LIL processes and for reverse engineering applications