Integrated atomistic process and device simulation of decananometre MOSFETs

In this paper we present a methodology for the integrated atomistic process and device simulation of decananometre MOSFETs. The atomistic process simulations were carried out using the kinetic Monte Carlo process simulator DADOS, which is now integrated into the Synopsys 3D process and device simulation suite Taurus. The device simulations were performed using the Glasgow 3D statistical atomistic simulator, which incorporates density gradient quantum corrections. The overall methodology is illustrated in the atomistic process and device simulation of a well behaved 35 nm physical gate length MOSFET reported by Toshiba

Atomistic Simulations of Nanotube Fracture

The fracture of carbon nanotubes is studied by atomistic simulations. The fracture behavior is found to be almost independent of the separation energy and to depend primarily on the inflection point in the interatomic potential. The rangle of fracture strians compares well with experimental results, but predicted range of fracture stresses is marketly higher than observed. Various plausible small-scale defects do not suffice to bring the failure stresses into agreement with available experimental results. As in the experiments, the fracture of carbon nanotubes is predicted to be brittle. The results show moderate dependence of fracture strength on chirality.Comment: 12 pages, PDF, submitted to Phy. Rev.

Statistical Mechanics of DNA Rupture: Theory and Simulations

We study the effects of the shear force on the rupture mechanism on a double stranded DNA. Motivated by recent experiments, we perform the atomistic simulations with explicit solvent to obtain the distributions of extension in hydrogen and covalent bonds below the rupture force. We obtain a significant difference between the atomistic simulations and the existing results in the iterature based on the coarse-grained models (theory and simulations). We discuss the possible reasons and improve the coarse-grained model by incorporating the consequences of semi-microscopic details of the nucleotides in its description. The distributions obtained by the modified model (simulations and theoretical) are qualitatively similar to the one obtained using atomistic simulations.Comment: 18 pages, 9 figures. Accepted in J. Chem. Phys. (2013). arXiv admin note: text overlap with arXiv:1104.305

Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons

Producción CientíficaThe effective dopant concentration in p-type Si detectors reduces with irradiation fluence at low fluences due to the acceptor removal process, which degrades detector performance and shortens its lifetime. This effect has been experimentally characterized and parametrized, but its microscopic origin is still unknown. We use atomistic simulations to gain insight into acceptor removal in neutron irradiation by modeling damage generation and defect-dopant interactions. We analyze the effect on dopant deactivation of the Si di- and tri-interstitial diffusion, the inhomogeneity of irradiation damage and the wafer temperature rise during irradiation. We characterize defect generation rates and identify the relevant defect-dopant interactions. Acceptor removal occurs mainly through the formation of Bi pairs and small boron-interstitial clusters, and it is limited by the availability of mobile Si interstitials. The presence of impurities (O, C) modifies B-complexes favoring the formation of BiO, but has a limited effect on the amount of removed acceptors.Ministerio de Ciencia e Innovación (project PID2020-115118GB-I00

Hierarchical Lattice Models of Hydrogen Bond Networks in Water

We develop a graph-based model of the hydrogen bond network in water, with a view towards quantitatively modeling the molecular-level correlational structure of the network. The networks are formed are studied by the constructing the model on two infinite-dimensional lattices. Our models are built \emph{bottom up}, based on microscopic information coming from atomistic simulations, and we show that the predictions of the model are consistent with known results from ab-initio simulations of liquid water. We show that simple entropic models can predict the correlations and clustering of local-coordination defects around tetrahedral waters observed in the atomistic simulations. We also find that orientational correlations between bonds are longer ranged than density correlations, and determine the directional correlations within closed loops and show that the patterns of water wires within these structures are also consistent with previous atomistic simulations. Our models show the existence of density and compressibility anomalies, as seen in the real liquid, and the phase diagram of these models is consistent with the singularity-free scenario previously proposed by Sastry and co-workers (Sastry et al, PRE 53, 6144 (1996)).Comment: 17 pages, published versio

Finite Sized Atomistic Simulations of Screw Dislocations

The interaction of screw dislocations with an applied stress is studied using atomistic simulations in conjunction with a continuum treatment of the role played by the far field boundary condition. A finite cell of atoms is used to consider the response of dislocations to an applied stress and this introduces an additional force on the dislocation due to the presence of the boundary. Continuum mechanics is used to calculate the boundary force which is subsequently accounted for in the equilibrium condition for the dislocation. Using this formulation, the lattice resistance curve and the associated Peierls stress are calculated for screw dislocations in several close packed metals. As a concrete example of the boundary force method, we compute the bow out of a pinned screw dislocation; the line-tension of the dislocation is calculated from the results of the atomistic simulations using a variational principle that explicitly accounts for the boundary force.Comment: LaTex, 20 pages, 11 figure