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oaioai:scholarworks.unist.ac.kr:201301/7390

Enhancement of magnetic properties by nitrogen implantation to Mn-implanted p-type GaN

Authors
Publication date
17 October 2014
Publisher
AMER INST PHYSICS
Doi

    Abstract

    N and Mn ions were co-implanted into p-type GaN and subsequently annealed at 700-900degreesC. Compared with Mn-implanted sample, the (Mn+N)-implanted sample revealed a larger ferromagnetic signal. This was attributed to the increase of Ga-Mn magnetic phases. Mn-N compounds, such as Mn6N2.58 and Mn3N2, decreased and the resistivity significantly increased, meaning a reduction of N vacancies. It is suggested that enhancement in ferromagnetic properties in the (Mn+N)-implanted GaN originated from the reduction of N vacancies and the increase of Ga-Mn magnetic phases.open293

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    This paper was published in ScholarWorks@UNIST.

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