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Charge profile of surface doped C

Abstract

We study the charge profile of a C60-FET (field effect transistor) as used in the experiments of Schön, Kloc and Batlogg. Using a tight-binding model, we calculate the charge profile treating the Coulomb interaction in a mean-field approximation. At low doping, the charge profile behaves similarly to the case of a continuous space-charge layer and becomes confined to a single interface layer for doping higher than ~ 0.3 electron (or hole) per C60 molecule. The morahedral disorder of the C60 molecules smoothens the structure in the density of states

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EDP Sciences OAI-PMH repository (1.2.0)

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Last time updated on 10/04/2020

This paper was published in EDP Sciences OAI-PMH repository (1.2.0).

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