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We study the charge profile of a C60-FET
(field effect transistor) as used
in the experiments of Schön, Kloc and Batlogg. Using a tight-binding model, we calculate the charge profile treating
the Coulomb interaction in
a mean-field approximation. At low doping, the
charge profile behaves similarly to the
case of a continuous
space-charge
layer and becomes confined to
a single interface layer for doping
higher than ~ 0.3 electron (or hole) per C60 molecule.
The morahedral disorder of the C60 molecules smoothens the structure in
the density of states
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