Analysis of the nBn-type barrier structures for infrared photodiode detectors


Modern trends in the technology of CdxHg1–xTe-based photosensitive barrier structures for the middle and far infrared bands, which can operate at near-room temperatures, are analyzed. Main approaches to solving the problem of increasing the photodiode-detector operating temperature have been considered and analyzed

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Tomsk State University Repository

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This paper was published in Tomsk State University Repository.

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