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Dependence of Domain Wall Structure for Low Field Injection into Magnetic Nanowires

Abstract

Micromagnetic simulation is used to model the injection of a domain wall into a magnetic nanowire with field strengths less than the so-called Walker field. This ensures fast, reliable motion of the wall. When the wire is located at the edge of a small injecting disk, a bias field used to control the orientation of the domain wall can reduce the pinning potential of the structure. The low field injection is explained by a simple model, which relies on the topological nature of a domain wall. The technique can quickly inject multiple domain walls with a known magnetic structure

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This paper was published in epublications@Marquette.

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