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Graphene-semiconductor
quantum dot (QD) hybrid field effect phototransistors (FEpTs) have
attracted much interest due to their ultrahigh gain and responsivity
in photo detection. However, most reported results are based on single-layer
heterojunction, and the multiheterojunction FEpTs are often ignored.
Here, we design two typical multiheterojunction FEpTs based on graphene–PbSe
quantum dot (QD) hybrids, including QD at the bottom layer (QD-bottom)
and graphene at the bottom layer (G-bottom) FEpTs. Through a comparative
study, G-bottom FEpTs showed a multisaturation behavior due to the
multigraphene layer effect, which was absent in the QD-bottom FEpTs.
The mobilities for electrons and holes were μ<sub>E</sub> =
147 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup> and
μ<sub>E</sub> = 137 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup> in the G-bottom FEpTs and μ<sub>E</sub> = 14
cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup> and μ<sub>E</sub> = 59 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup> in the QD-bottom FEpTs. Higher responsivity (∼10<sup>6</sup> A W<sup>–1</sup>) and faster response rate were both achieved
by the G-bottom FEpTs. All of the advantages in G-bottom FEpTs were
attributed to the back-gate effect. Therefore, high performance is
expected in those FEpTs whose heterojunctions are designed to be close
to the back-gate
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