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Surface-Based Control of Oxygen Interstitial Injection into ZnO via Submonolayer Sulfur Adsorption
Abstract
Semiconductor surfaces offer efficient pathways for injecting native point defects into the underlying bulk. Adsorption of a suitably chosen foreign element serves to modulate the injection rate, even at small percentages of a monolayer. Through self-diffusion experiments using isotopic exchange with labeled oxygen, the present work demonstrates such behavior in the case of sulfur adsorption on <i>c</i>-axis Zn-terminated ZnO(0001), wherein the clean surface injects with exceptional efficiency. The experiments provide strong evidence that the injection sites comprise only a small fraction of the total surface atom density and that sulfur adsorption merely blocks those sites. Comparison with related systems shows this simple mechanism is surprisingly uncommon- Text
- Journal contribution
- Biophysics
- Medicine
- Physiology
- Plasma Physics
- Environmental Sciences not elsewhere classified
- Chemical Sciences not elsewhere classified
- Physical Sciences not elsewhere classified
- Submonolayer Sulfur Adsorption Semiconductor surfaces offer
- experiment
- Oxygen Interstitial Injection
- site
- sulfur adsorption
- injection
- surface atom density
- ZnO