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PbS-Decorated WS<sub>2</sub> Phototransistors with Fast Response
Abstract
Tungsten disulfide (WS<sub>2</sub>), as a typical metal dichalcogenides (TMDs), has aroused keen research interests in photodetection. Here, field effect phototransistors (FE<sub>p</sub>Ts) based on heterojunction between monolayer WS<sub>2</sub> and PbS colloidal quantum dots are demonstrated to show high photoresponsivity (up to ∼14 A/W), wide electric bandwidth (∼396 Hz), and excellent stability. Meanwhile, the devices exhibit fast photoresponse times of ∼153 μs (rise time) and ∼226 μs (fall time) due to the assistance of heterojunction on the transfer of photoexcitons. Therefore, excellent device performances strongly underscore monolayer WS<sub>2</sub>–PbS quantum dot as a promising material for future photoelectronic applications- Text
- Journal contribution
- Biophysics
- Neuroscience
- Physiology
- Space Science
- Biological Sciences not elsewhere classified
- Chemical Sciences not elsewhere classified
- Physical Sciences not elsewhere classified
- Fast Response Tungsten disulfide
- research interests
- PbS-Decorated WS 2 Phototransistors
- FE p Ts
- heterojunction
- field effect phototransistors
- rise time
- quantum dots
- photoresponse times
- devices exhibit
- fall time
- device performances
- monolayer WS 2
- TMD
- metal dichalcogenides