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oaioai:oasis.postech.ac.kr:2014.oak/9493

Fabrication of (Ga,Mn)N nanowires with room temperature ferromagnetism using nitrogen plasma

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Publication date
1 July 2019
Publisher
AMER INST PHYSICS
Doi

    Abstract

    Ferromagnetic properties of (Ga,Mn)N nanowires were examined by treating with nitrogen plasma at 200 degrees C. Nanowires grown by chemical vapor deposition were n-type and no secondary phases were found. The magnetic moment increased and was maintained at room temperature by this treatment. Synchrotron radiation photoemission spectroscopy revealed that Ga vacancies significantly increased, but N vacancies decreased by plasma treatment, leading to a decrease of Mn-Ga-V-N complex and the enhancement of Mn activation. (c) 2005 American Institute of Physics.open111518sciescopu

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    포항공과대학교

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    Last time updated on 11/02/2018

    This paper was published in 포항공과대학교.

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