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oaioai:oasis.postech.ac.kr:2014.oak/9479

Enhancement of magnetic properties by nitrogen implantation to Mn-implanted p-type GaN

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Publication date
1 July 2019
Publisher
AMER INST PHYSICS
Doi

    Abstract

    N and Mn ions were co-implanted into p-type GaN and subsequently annealed at 700-900degreesC. Compared with Mn-implanted sample, the (Mn+N)-implanted sample revealed a larger ferromagnetic signal. This was attributed to the increase of Ga-Mn magnetic phases. Mn-N compounds, such as Mn6N2.58 and Mn3N2, decreased and the resistivity significantly increased, meaning a reduction of N vacancies. It is suggested that enhancement in ferromagnetic properties in the (Mn+N)-implanted GaN originated from the reduction of N vacancies and the increase of Ga-Mn magnetic phases. (C) 2004 American Institute of Physics.open113133sciescopu

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    포항공과대학교

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    Last time updated on 11/02/2018

    This paper was published in 포항공과대학교.

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