oaioai:ir.nimte.ac.cn/:174433/550

Influence of the channel layer thickness on electrical properties of indium zinc oxide thin-film transistor

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Publication date
1 January 2010
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Doi

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    Institutional Repository of Ningbo Institute of Material Technology & Engineering, CAS

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    Last time updated on 22/01/2018

    This paper was published in Institutional Repository of Ningbo Institute of Material Technology & Engineering, CAS.

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