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Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes

By P.A. Shields, S. Lis, T. Lee, D.W.E. Allsopp, M.D.B. Charlton, M.E. Zoorob and W.N. Wang

Abstract

Enhanced light extraction from photonic crystal light-emitting diodes etched into the device surface is described. Finite difference time domain modeling indicates that scattering or absorption at the substrate-epilayer interface is the dominant limiting process

Year: 2009
OAI identifier: oai:opus.bath.ac.uk:30607

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