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Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment

By S. Lindgren, A.A. Affolder, P.P. Allport, R. Bates, C. Betancourt, J. Bohm, H. Brown, C. Buttar, J.R. Carter, G. Casse, H. Chen, A. Chilingarov, V. Cindro, A. Clark, N. Dawson, B. DeWilde, F. Doherty, Z. Dolezal, L. Eklund, V. Fadeyev, D. Ferrèrre, H. Fox, R. French, C. García, M. Gerling, S. Gonzalez Sevilla, I. Gorelov, A. Greenall, A.A. Grillo, N. Hamasaki, K. Hara, H. Hatano, M. Hoeferkamp, L.B.A. Hommels, Y. Ikegami, K. Jakobs, J. Kierstead, P. Kodys, M. Köhler, T. Kohriki, G. Kramberger, C. Lacasta, Z. Li, D. Lynn, P. Maddock, I. Mandić, F. Martinez-McKinney, S.Martíi Garcia, R. Maunu, R. McCarthy, J. Metcalfe, M. Mikestikova, M. Mikuž, M. Miñano, S. Mitsui, V. O'Shea, U. Parzefall, H.F.-W. Sadrozinski, D. Schamberger, A. Seiden, S. Terada, S. Paganis, D. Robinson, D. Puldon, S. Sattari, S. Seidel, K. Toms, D. Tsionou, Y. Unno, J. Von Wilpert, M. Wormald, J. Wright and M. Yamada


We are developing n+-in-p, p-bulk and n-readout, microstrip sensors as a non-inverting radiation hard silicon detector for the ATLAS Tracker Upgrade at the super LHC experiment. The surface radiation damages of the sensors fabricated by Hamamatsu Photonics are characterized on the interstrip capacitance, interstrip resistance and punch-through protection evolution. The detector should provide acceptable strip isolation, exceeding the input impedance of the signal readout chip ∼1 kΩ, after the integrated luminosity of 6 ab−1, which is twice the luminosity goal

Publisher: 'Elsevier BV'
Year: 2011
DOI identifier: 10.1016/j.nima.2010.04.094
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Provided by: Enlighten
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