Location of Repository

Alloy effects in GaInN/GaN heterostructures

By Duc Phuong Nguyen, Nicolas Regnault, Robson Ferreira and Gérald Bastard

Abstract

submitted to Applied Physics LetterWe show that the large band offsets between GaN and InN and the heavy carrier effective masses preclude the use of the Virtual Crystal Approximation to describe the electronic structure of Ga_(1-x)In_(x)N/GaN heterostructures while this approximation works very well for the Ga_(1-x)In_(x)As/GaAs heterostructures

Topics: VCA, alloy, GaInN, 73.22., 78.40.Fy, [PHYS.COND.CM-GEN] Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]
Publisher: Elsevier
Year: 2004
OAI identifier: oai:HAL:hal-00000821v1
Provided by: Hal-Diderot
Download PDF:
Sorry, we are unable to provide the full text but you may find it at the following location(s):
  • https://hal.archives-ouvertes.... (external link)
  • https://hal.archives-ouvertes.... (external link)
  • https://hal.archives-ouvertes.... (external link)
  • https://hal.archives-ouvertes.... (external link)
  • https://hal.archives-ouvertes.... (external link)
  • Suggested articles


    To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.