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Gated lateral p-i-n junction device for light sensing

By K. Abid and F. Rahman

Abstract

We describe a silicon-based lateral p-i-n junction device for light sensing applications. This device is based on metal-oxide-semiconductor (MOS) architecture and, therefore, has a gate for controlling its electrical operating point. Device fabrication is described in brief, followed by a description of the device's electrical and optoelectronic properties including current-voltage characteristics and optical transfer characteristics. It shows good linearity and high optical responsivity of 20 and 16 A/W for red and blue light, respectively. The associated gate can be used to control the quiescent operating point thus making it easy to interface the detector with ordinary metal-oxide-semiconductor field-effect transistors (MOSFETs)

Topics: TK
Publisher: 'Institute of Electrical and Electronics Engineers (IEEE)'
Year: 2011
DOI identifier: 10.1109/LPT.2011.2143396
OAI identifier: oai:eprints.gla.ac.uk:53802
Provided by: Enlighten
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